Abstract
The electrical properties of lanthanum doped lead zirconate titanate (PLZT) thin films prepared by photochemical metal-organic deposition (PMOD) using photosensitive starting precursors have been characterized. PLZT films with various La concentration were prepared by PMOD on Si(1 0 0) for observing the image of self-patterned PLZT film or on Pt(1 1 1)/Ti/SiO2/Si(1 0 0) for ferroelectric properties measurement. Even though PLZT film with 0 mol% of La, strictly PZT, showed an asymmetric behavior in polarization-voltage (P-E) relation, PLZT film by doping La showed symmetric behavior in P-E relation. The amelioration of electric and ferroelectric properties with increased substitution of La in PLZT film was observed, especially with 3 mol% La doped PLZT film, the most characteristic P-E hysteresis loop in the point of imprint property was obtained with comparatively large remnant polarization, 30 μC/cm2 at 15 V. Also, capacitance and leakage current behavior of PLZT film were revealed to be sensitive to the contents of La.
| Original language | English |
|---|---|
| Pages (from-to) | 215-220 |
| Number of pages | 6 |
| Journal | Microelectronic Engineering |
| Volume | 71 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2004 Feb |
Bibliographical note
Funding Information:This work was supported by Grant No. R01-2000-000-00244-0 from the Basic Research Program of the Korea Science & Engineering Foundation.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering