Non-photolithographic organic thin film transistors (OTFTs) were fabricated using pentacene and SiNx films on p-Si (100) at room temperature to investigate both the effects of their device structure (two different types of OTFTs, top-electrode and bottom-electrode) and the pentacene film deposition-rate on their current-voltage characteristics. OTFTs of the top-electrode type were prepared by thermal evaporation at various deposition rates of 1, 3, 5 and 7 Å/s. The top-electrode OTFTs exhibited 40 times higher amount of currents than the bottom-electrode OTFTs at the same bias conditions. An optimum OTFT was obtained using 5 Å/s and exhibited the saturation current, ID of approximately 4 μA at a gate bias of -40 V along with the field effect mobility of ∼0.046 cm2/Vs and the on/off current ratio of ∼105.
Bibliographical noteFunding Information:
The authors acknowledge the support from Korea Institute of Industrial Technology Evaluation and Planning, Grant No. A00-A04-2208-05, and the partial support from the Brain Korea 21 Program.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry