Characterization of in-situ synthesized CdSxSe1-x ternary alloy nanowire photosensor

Hong Rae Kim; Byoung Gi An; Young Wook Chang; Min Jung Kang; Jae Gwan Park; Jae Chul Pyun

doi:10.4191/kcers.2019.56.3.10

Characterization of in-situ synthesized CdS_xSe_1-x ternary alloy nanowire photosensor

Hong Rae Kim, Byoung Gi An, Young Wook Chang, Min Jung Kang, Jae Gwan Park, Jae Chul Pyun

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

CdS_xSe_1-x ternary alloy nanowires (x = 0, 0.5, 1.0) were fabricated by in-situ synthesis on interdigitated electrode. Morphology analysis of the alloy nanowires according to the synthesis zone and composition analysis of the nanowires were carried out by SEM and EDX. The crystal structures of the alloy nanowires were studied by XRD analysis. The I-V characteristics of the nanowire photosensors were analyzed according to the intensity of incident light. The influence of zonal synthesis position on the photosensor response to the wavelength of incident light was also analyzed, and was found to be related to the bandgap of alloy nanowires. The analysis results indicate that photosensors with a specific photoresponse could be selected based on the composition of the source materials of nanowires as well as by controlling the in-situ synthesis zone.

Original language	English
Pages (from-to)	308-316
Number of pages	9
Journal	Journal of the Korean Ceramic Society
Volume	56
Issue number	3
DOIs	https://doi.org/10.4191/kcers.2019.56.3.10
Publication status	Published - 2019

Bibliographical note

Funding Information:
This work was supported by the Nano-Convergence Foundation [grant number: R201602210] funded by the Ministry of Science, ICT and Future Planning (MSIP, Korea) and Ministry of Trade, Industry and Energy (MOTIE, Korea) and the National Research Foundation of Korea [grant numbers: NRF-2017R1A2B4004077].

Publisher Copyright:
© 2019 Korean Ceramic Society. All rights reserved.

All Science Journal Classification (ASJC) codes

Ceramics and Composites

Access to Document

10.4191/kcers.2019.56.3.10

Cite this

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title = "Characterization of in-situ synthesized CdSxSe1-x ternary alloy nanowire photosensor",

abstract = "CdSxSe1-x ternary alloy nanowires (x = 0, 0.5, 1.0) were fabricated by in-situ synthesis on interdigitated electrode. Morphology analysis of the alloy nanowires according to the synthesis zone and composition analysis of the nanowires were carried out by SEM and EDX. The crystal structures of the alloy nanowires were studied by XRD analysis. The I-V characteristics of the nanowire photosensors were analyzed according to the intensity of incident light. The influence of zonal synthesis position on the photosensor response to the wavelength of incident light was also analyzed, and was found to be related to the bandgap of alloy nanowires. The analysis results indicate that photosensors with a specific photoresponse could be selected based on the composition of the source materials of nanowires as well as by controlling the in-situ synthesis zone.",

author = "Kim, {Hong Rae} and An, {Byoung Gi} and Chang, {Young Wook} and Kang, {Min Jung} and Park, {Jae Gwan} and Pyun, {Jae Chul}",

note = "Funding Information: This work was supported by the Nano-Convergence Foundation [grant number: R201602210] funded by the Ministry of Science, ICT and Future Planning (MSIP, Korea) and Ministry of Trade, Industry and Energy (MOTIE, Korea) and the National Research Foundation of Korea [grant numbers: NRF-2017R1A2B4004077]. Publisher Copyright: {\textcopyright} 2019 Korean Ceramic Society. All rights reserved.",

year = "2019",

doi = "10.4191/kcers.2019.56.3.10",

language = "English",

volume = "56",

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T1 - Characterization of in-situ synthesized CdSxSe1-x ternary alloy nanowire photosensor

AU - Kim, Hong Rae

AU - An, Byoung Gi

AU - Chang, Young Wook

AU - Kang, Min Jung

AU - Park, Jae Gwan

AU - Pyun, Jae Chul

N1 - Funding Information: This work was supported by the Nano-Convergence Foundation [grant number: R201602210] funded by the Ministry of Science, ICT and Future Planning (MSIP, Korea) and Ministry of Trade, Industry and Energy (MOTIE, Korea) and the National Research Foundation of Korea [grant numbers: NRF-2017R1A2B4004077]. Publisher Copyright: © 2019 Korean Ceramic Society. All rights reserved.

PY - 2019

Y1 - 2019

N2 - CdSxSe1-x ternary alloy nanowires (x = 0, 0.5, 1.0) were fabricated by in-situ synthesis on interdigitated electrode. Morphology analysis of the alloy nanowires according to the synthesis zone and composition analysis of the nanowires were carried out by SEM and EDX. The crystal structures of the alloy nanowires were studied by XRD analysis. The I-V characteristics of the nanowire photosensors were analyzed according to the intensity of incident light. The influence of zonal synthesis position on the photosensor response to the wavelength of incident light was also analyzed, and was found to be related to the bandgap of alloy nanowires. The analysis results indicate that photosensors with a specific photoresponse could be selected based on the composition of the source materials of nanowires as well as by controlling the in-situ synthesis zone.

AB - CdSxSe1-x ternary alloy nanowires (x = 0, 0.5, 1.0) were fabricated by in-situ synthesis on interdigitated electrode. Morphology analysis of the alloy nanowires according to the synthesis zone and composition analysis of the nanowires were carried out by SEM and EDX. The crystal structures of the alloy nanowires were studied by XRD analysis. The I-V characteristics of the nanowire photosensors were analyzed according to the intensity of incident light. The influence of zonal synthesis position on the photosensor response to the wavelength of incident light was also analyzed, and was found to be related to the bandgap of alloy nanowires. The analysis results indicate that photosensors with a specific photoresponse could be selected based on the composition of the source materials of nanowires as well as by controlling the in-situ synthesis zone.

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