Characterization of films and interfaces in n-ZnO/p-Si photodiodes

J. Y. Lee, Y. S. Choi, W. H. Choi, H. W. Yeom, Y. K. Yoon, J. H. Kim, S. Im

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65 Citations (Scopus)


We report on the fabrication of n-ZnO/p-Si heterojunction photodiodes. RF sputtering was performed to deposit ZnO films on p-Si substrates at various substrate temperatures of 300, 480 and 550 °C using Ar:O2 ratios of 6:1. Typical rectifying behaviors were observed from most of the diodes as characterized by the current-voltage (I-V) measurement. Some of the diodes exhibit photoelectric effects under illumination using monochromatic red light with a wavelength of 670 nm. Maximum quantum efficiency of 53% was obtained under a reverse bias condition from a diode with ZnO film deposited at 480 °C. Measuring photoluminescence, transmittance, sheet resistance from the ZnO films, and characterizing the n-ZnO/p-Si interface with X-ray photoelectron spectroscopy, it is concluded that the diodes with n-ZnO deposited at 480 °C conserve relatively a high film quality and good interface junction to exhibit the best photoelectric property.

Original languageEnglish
Pages (from-to)112-116
Number of pages5
JournalThin Solid Films
Publication statusPublished - 2002 Dec 2

Bibliographical note

Funding Information:
The work has been supported by the Brain Korea 21 project and partly supported by Korea Research Foundation KISTEP fund (#M2-0204-25-0033-02-A09-03-004).

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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