Characterization of films and interfaces in n-ZnO/p-Si photodiodes

J. Y. Lee; Y. S. Choi; W. H. Choi; H. W. Yeom; Y. K. Yoon; J. H. Kim; S. Im

doi:10.1016/S0040-6090(02)00742-3

Characterization of films and interfaces in n-ZnO/p-Si photodiodes

J. Y. Lee, Y. S. Choi, W. H. Choi, H. W. Yeom, Y. K. Yoon, J. H. Kim, S. Im

Department of Physics

Research output: Contribution to journal › Article › peer-review

65 Citations (Scopus)

Abstract

We report on the fabrication of n-ZnO/p-Si heterojunction photodiodes. RF sputtering was performed to deposit ZnO films on p-Si substrates at various substrate temperatures of 300, 480 and 550 °C using Ar:O₂ ratios of 6:1. Typical rectifying behaviors were observed from most of the diodes as characterized by the current-voltage (I-V) measurement. Some of the diodes exhibit photoelectric effects under illumination using monochromatic red light with a wavelength of 670 nm. Maximum quantum efficiency of 53% was obtained under a reverse bias condition from a diode with ZnO film deposited at 480 °C. Measuring photoluminescence, transmittance, sheet resistance from the ZnO films, and characterizing the n-ZnO/p-Si interface with X-ray photoelectron spectroscopy, it is concluded that the diodes with n-ZnO deposited at 480 °C conserve relatively a high film quality and good interface junction to exhibit the best photoelectric property.

Original language	English
Pages (from-to)	112-116
Number of pages	5
Journal	Thin Solid Films
Volume	420-421
DOIs	https://doi.org/10.1016/S0040-6090(02)00742-3
Publication status	Published - 2002 Dec 2

Bibliographical note

Funding Information:
The work has been supported by the Brain Korea 21 project and partly supported by Korea Research Foundation KISTEP fund (#M2-0204-25-0033-02-A09-03-004).

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/S0040-6090(02)00742-3

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@article{7be2d442ffdb49939449950eb4709959,

title = "Characterization of films and interfaces in n-ZnO/p-Si photodiodes",

abstract = "We report on the fabrication of n-ZnO/p-Si heterojunction photodiodes. RF sputtering was performed to deposit ZnO films on p-Si substrates at various substrate temperatures of 300, 480 and 550 °C using Ar:O2 ratios of 6:1. Typical rectifying behaviors were observed from most of the diodes as characterized by the current-voltage (I-V) measurement. Some of the diodes exhibit photoelectric effects under illumination using monochromatic red light with a wavelength of 670 nm. Maximum quantum efficiency of 53% was obtained under a reverse bias condition from a diode with ZnO film deposited at 480 °C. Measuring photoluminescence, transmittance, sheet resistance from the ZnO films, and characterizing the n-ZnO/p-Si interface with X-ray photoelectron spectroscopy, it is concluded that the diodes with n-ZnO deposited at 480 °C conserve relatively a high film quality and good interface junction to exhibit the best photoelectric property.",

author = "Lee, {J. Y.} and Choi, {Y. S.} and Choi, {W. H.} and Yeom, {H. W.} and Yoon, {Y. K.} and Kim, {J. H.} and S. Im",

note = "Funding Information: The work has been supported by the Brain Korea 21 project and partly supported by Korea Research Foundation KISTEP fund (#M2-0204-25-0033-02-A09-03-004).",

year = "2002",

month = dec,

day = "2",

doi = "10.1016/S0040-6090(02)00742-3",

language = "English",

volume = "420-421",

pages = "112--116",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

}

TY - JOUR

T1 - Characterization of films and interfaces in n-ZnO/p-Si photodiodes

AU - Lee, J. Y.

AU - Choi, Y. S.

AU - Choi, W. H.

AU - Yeom, H. W.

AU - Yoon, Y. K.

AU - Kim, J. H.

AU - Im, S.

N1 - Funding Information: The work has been supported by the Brain Korea 21 project and partly supported by Korea Research Foundation KISTEP fund (#M2-0204-25-0033-02-A09-03-004).

PY - 2002/12/2

Y1 - 2002/12/2

N2 - We report on the fabrication of n-ZnO/p-Si heterojunction photodiodes. RF sputtering was performed to deposit ZnO films on p-Si substrates at various substrate temperatures of 300, 480 and 550 °C using Ar:O2 ratios of 6:1. Typical rectifying behaviors were observed from most of the diodes as characterized by the current-voltage (I-V) measurement. Some of the diodes exhibit photoelectric effects under illumination using monochromatic red light with a wavelength of 670 nm. Maximum quantum efficiency of 53% was obtained under a reverse bias condition from a diode with ZnO film deposited at 480 °C. Measuring photoluminescence, transmittance, sheet resistance from the ZnO films, and characterizing the n-ZnO/p-Si interface with X-ray photoelectron spectroscopy, it is concluded that the diodes with n-ZnO deposited at 480 °C conserve relatively a high film quality and good interface junction to exhibit the best photoelectric property.

AB - We report on the fabrication of n-ZnO/p-Si heterojunction photodiodes. RF sputtering was performed to deposit ZnO films on p-Si substrates at various substrate temperatures of 300, 480 and 550 °C using Ar:O2 ratios of 6:1. Typical rectifying behaviors were observed from most of the diodes as characterized by the current-voltage (I-V) measurement. Some of the diodes exhibit photoelectric effects under illumination using monochromatic red light with a wavelength of 670 nm. Maximum quantum efficiency of 53% was obtained under a reverse bias condition from a diode with ZnO film deposited at 480 °C. Measuring photoluminescence, transmittance, sheet resistance from the ZnO films, and characterizing the n-ZnO/p-Si interface with X-ray photoelectron spectroscopy, it is concluded that the diodes with n-ZnO deposited at 480 °C conserve relatively a high film quality and good interface junction to exhibit the best photoelectric property.

UR - http://www.scopus.com/inward/record.url?scp=17144461514&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=17144461514&partnerID=8YFLogxK

U2 - 10.1016/S0040-6090(02)00742-3

DO - 10.1016/S0040-6090(02)00742-3

M3 - Article

AN - SCOPUS:17144461514

SN - 0040-6090

VL - 420-421

SP - 112

EP - 116

JO - Thin Solid Films

JF - Thin Solid Films

ER -

Characterization of films and interfaces in n-ZnO/p-Si photodiodes

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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