The Ga1-xMnxN epilayers with a well-ordered ferromagnetic structure were grown on sapphire (0001) substrates. Ga 1-xMnxN films exhibited n-type conductivity and ferromagnetic ordering with a Curie temperature (TC) above room temperature. The photoluminescence (PL) measurements revealed that the Mn acceptor level of Ga1-xMnxN layers having low Mn content was located at around 330 meV above the top of the valence band. The results show that the excitation and temperature-dependent PL provided convincing evidence of a band-edge exciton-acceptor transition character.
|Number of pages||6|
|Journal||Journal of Applied Physics|
|Publication status||Published - 2004 Jan 15|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)