Characterization of ferromagnetic Ga1-xMnxN layers grown on sapphire (0001) substrates

I. T. Yoon; C. S. Park; H. J. Kim; Y. G. Kim; T. W. Kang; M. C. Jeong; M. H. Ham; J. M. Myoung

doi:10.1063/1.1633340

Characterization of ferromagnetic Ga_1-xMn_xN layers grown on sapphire (0001) substrates

I. T. Yoon, C. S. Park, H. J. Kim, Y. G. Kim, T. W. Kang, M. C. Jeong, M. H. Ham, J. M. Myoung

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

The Ga_1-xMn_xN epilayers with a well-ordered ferromagnetic structure were grown on sapphire (0001) substrates. Ga _1-xMn_xN films exhibited n-type conductivity and ferromagnetic ordering with a Curie temperature (T_C) above room temperature. The photoluminescence (PL) measurements revealed that the Mn acceptor level of Ga_1-xMn_xN layers having low Mn content was located at around 330 meV above the top of the valence band. The results show that the excitation and temperature-dependent PL provided convincing evidence of a band-edge exciton-acceptor transition character.

Original language	English
Pages (from-to)	591-596
Number of pages	6
Journal	Journal of Applied Physics
Volume	95
Issue number	2
DOIs	https://doi.org/10.1063/1.1633340
Publication status	Published - 2004 Jan 15

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

Access to Document

10.1063/1.1633340

Cite this

@article{8397c9ae27c242fca4f24e5b8c8b47db,

title = "Characterization of ferromagnetic Ga1-xMnxN layers grown on sapphire (0001) substrates",

abstract = "The Ga1-xMnxN epilayers with a well-ordered ferromagnetic structure were grown on sapphire (0001) substrates. Ga 1-xMnxN films exhibited n-type conductivity and ferromagnetic ordering with a Curie temperature (TC) above room temperature. The photoluminescence (PL) measurements revealed that the Mn acceptor level of Ga1-xMnxN layers having low Mn content was located at around 330 meV above the top of the valence band. The results show that the excitation and temperature-dependent PL provided convincing evidence of a band-edge exciton-acceptor transition character.",

author = "Yoon, {I. T.} and Park, {C. S.} and Kim, {H. J.} and Kim, {Y. G.} and Kang, {T. W.} and Jeong, {M. C.} and Ham, {M. H.} and Myoung, {J. M.}",

year = "2004",

month = jan,

day = "15",

doi = "10.1063/1.1633340",

language = "English",

volume = "95",

pages = "591--596",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "2",

}

TY - JOUR

T1 - Characterization of ferromagnetic Ga1-xMnxN layers grown on sapphire (0001) substrates

AU - Yoon, I. T.

AU - Park, C. S.

AU - Kim, H. J.

AU - Kim, Y. G.

AU - Kang, T. W.

AU - Jeong, M. C.

AU - Ham, M. H.

AU - Myoung, J. M.

PY - 2004/1/15

Y1 - 2004/1/15

N2 - The Ga1-xMnxN epilayers with a well-ordered ferromagnetic structure were grown on sapphire (0001) substrates. Ga 1-xMnxN films exhibited n-type conductivity and ferromagnetic ordering with a Curie temperature (TC) above room temperature. The photoluminescence (PL) measurements revealed that the Mn acceptor level of Ga1-xMnxN layers having low Mn content was located at around 330 meV above the top of the valence band. The results show that the excitation and temperature-dependent PL provided convincing evidence of a band-edge exciton-acceptor transition character.

AB - The Ga1-xMnxN epilayers with a well-ordered ferromagnetic structure were grown on sapphire (0001) substrates. Ga 1-xMnxN films exhibited n-type conductivity and ferromagnetic ordering with a Curie temperature (TC) above room temperature. The photoluminescence (PL) measurements revealed that the Mn acceptor level of Ga1-xMnxN layers having low Mn content was located at around 330 meV above the top of the valence band. The results show that the excitation and temperature-dependent PL provided convincing evidence of a band-edge exciton-acceptor transition character.

UR - http://www.scopus.com/inward/record.url?scp=0742268445&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0742268445&partnerID=8YFLogxK

U2 - 10.1063/1.1633340

DO - 10.1063/1.1633340

M3 - Article

AN - SCOPUS:0742268445

SN - 0021-8979

VL - 95

SP - 591

EP - 596

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 2

ER -

Characterization of ferromagnetic Ga_1-xMn_xN layers grown on sapphire (0001) substrates

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this