Characterization of channel strain evolution upon the silicidation of recessed source/drain Si1-xGex structures

S. W. Kim; J. H. Yoo; S. M. Koo; D. H. Ko; H. J. Lee

doi:10.1063/1.3633346

Characterization of channel strain evolution upon the silicidation of recessed source/drain Si_1-xGe_x structures

S. W. Kim, J. H. Yoo, S. M. Koo, D. H. Ko, H. J. Lee

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

This letter reports on Ni germanosilicide formation on recessed Si _0.82Ge_0.18 source/drain structures and its effects on channel strain. A combination of transmission electron microscopy techniques, including nanobeam diffraction, shed some light on a previously unrecognized factor in the channel strain evolution during silicidation: a Ge accumulation layer produced at the bottom of the germanosilicide layer. The formation of such a Ge rich layer added an additional compressive strain to the channel strain upon moderate silicidation, while the contribution of thermal strain arising from the cooling cycle became dominant in an excessively silicided sample, which turned the channel strain into a tensile value.

Original language	English
Article number	133107
Journal	Applied Physics Letters
Volume	99
Issue number	13
DOIs	https://doi.org/10.1063/1.3633346
Publication status	Published - 2011 Sept 26

Bibliographical note

Funding Information:
This work was financially supported by the “Next generation Substrate technology for high performance semiconductor devices (Grant No. KI002083)” of MKE and “System IC 2010” project of the Korea Ministry of Science and Technology and Ministry of Commerce, Industry and Energy, and acknowledges Hynix Semiconductor, Inc. for assistance with gate patterned wafer preparation.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.3633346

Cite this

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title = "Characterization of channel strain evolution upon the silicidation of recessed source/drain Si1-xGex structures",

abstract = "This letter reports on Ni germanosilicide formation on recessed Si 0.82Ge0.18 source/drain structures and its effects on channel strain. A combination of transmission electron microscopy techniques, including nanobeam diffraction, shed some light on a previously unrecognized factor in the channel strain evolution during silicidation: a Ge accumulation layer produced at the bottom of the germanosilicide layer. The formation of such a Ge rich layer added an additional compressive strain to the channel strain upon moderate silicidation, while the contribution of thermal strain arising from the cooling cycle became dominant in an excessively silicided sample, which turned the channel strain into a tensile value.",

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