Abstract
We describe the construction and characterization of a GaN violet laser diode in a compact, extended cavity geometry. Up to 3.5 mW of single frequency power at 392 nm is generated which is continuously tuneable over 6 GHz and coarsely tuneable over 2.7 nm. We place an upper limit on the linewidth of 5 MHz. The performance of the violet diode laser is compared to that of visible laser diodes in our extended cavity geometry. Possible spectroscopic applications are discussed.
Original language | English |
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Pages (from-to) | 185-188 |
Number of pages | 4 |
Journal | Optics Communications |
Volume | 175 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2000 Feb 15 |
Bibliographical note
Funding Information:We would like to thank the Royal Society, the Leverhulme Trust and the UK Engineering and Physical Sciences Research Council for their support of this work. K.D. is a Royal Society of Edinburgh Research Fellow.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Physical and Theoretical Chemistry
- Electrical and Electronic Engineering