Characterization of Al2O3 films grown by electron beam evaporator on Si substrates

Myoung Yone Seo; Edward Namkyu Cho; Chang Eun Kim; Pyung Moon; Ilgu Yun

doi:10.1109/INEC.2010.5424657

Characterization of Al₂O₃ films grown by electron beam evaporator on Si substrates

Myoung Yone Seo, Edward Namkyu Cho, Chang Eun Kim, Pyung Moon, Ilgu Yun

Department of Electrical and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

11 Citations (Scopus)

Abstract

We report the characterization of aluminum oxide (Al₂O ₃) films which are grown on Si substrates by electron beam evaporator. This paper focuses on the characteristic variation of Al2O3 films depending on the different annealing techniques, such as post-deposition annealing and post-metallization annealing. The capacitance-voltage (C-V) curves indicate a negative charge and interface trap charge density between the Al₂O₃ film and Si interface. The current-voltage (I-V) curves show a leakage current. The x-ray diffraction (XRD) patterns show the crystallinity of Al₂O₃ films. Based on the results, the annealing effect is important condition to increase negative fixed charge in the Al₂O₃ films.

Original language	English
Title of host publication	INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages	238-239
Number of pages	2
DOIs	https://doi.org/10.1109/INEC.2010.5424657
Publication status	Published - 2010
Event	2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China Duration: 2010 Jan 3 → 2010 Jan 8

Publication series

Name	INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

Other

Other	2010 3rd International Nanoelectronics Conference, INEC 2010
Country/Territory	China
City	Hongkong
Period	10/1/3 → 10/1/8

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/INEC.2010.5424657

Cite this

Seo, M. Y., Cho, E. N., Kim, C. E., Moon, P., & Yun, I. (2010). Characterization of Al₂O₃ films grown by electron beam evaporator on Si substrates. In INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings (pp. 238-239). Article 5424657 (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings). https://doi.org/10.1109/INEC.2010.5424657

@inproceedings{e1068573832747919b05a91ce4940e35,

title = "Characterization of Al2O3 films grown by electron beam evaporator on Si substrates",

abstract = "We report the characterization of aluminum oxide (Al2O 3) films which are grown on Si substrates by electron beam evaporator. This paper focuses on the characteristic variation of Al2O3 films depending on the different annealing techniques, such as post-deposition annealing and post-metallization annealing. The capacitance-voltage (C-V) curves indicate a negative charge and interface trap charge density between the Al2O3 film and Si interface. The current-voltage (I-V) curves show a leakage current. The x-ray diffraction (XRD) patterns show the crystallinity of Al2O3 films. Based on the results, the annealing effect is important condition to increase negative fixed charge in the Al2O3 films.",

author = "Seo, {Myoung Yone} and Cho, {Edward Namkyu} and Kim, {Chang Eun} and Pyung Moon and Ilgu Yun",

year = "2010",

doi = "10.1109/INEC.2010.5424657",

language = "English",

isbn = "9781424435449",

series = "INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings",

pages = "238--239",

booktitle = "INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings",

note = "2010 3rd International Nanoelectronics Conference, INEC 2010 ; Conference date: 03-01-2010 Through 08-01-2010",

}

Seo, MY, Cho, EN, Kim, CE, Moon, P & Yun, I 2010, Characterization of Al₂O₃ films grown by electron beam evaporator on Si substrates. in INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings., 5424657, INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings, pp. 238-239, 2010 3rd International Nanoelectronics Conference, INEC 2010, Hongkong, China, 10/1/3. https://doi.org/10.1109/INEC.2010.5424657

Characterization of Al₂O₃ films grown by electron beam evaporator on Si substrates. / Seo, Myoung Yone; Cho, Edward Namkyu; Kim, Chang Eun et al.
INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. p. 238-239 5424657 (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Seo, Myoung Yone

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N2 - We report the characterization of aluminum oxide (Al2O 3) films which are grown on Si substrates by electron beam evaporator. This paper focuses on the characteristic variation of Al2O3 films depending on the different annealing techniques, such as post-deposition annealing and post-metallization annealing. The capacitance-voltage (C-V) curves indicate a negative charge and interface trap charge density between the Al2O3 film and Si interface. The current-voltage (I-V) curves show a leakage current. The x-ray diffraction (XRD) patterns show the crystallinity of Al2O3 films. Based on the results, the annealing effect is important condition to increase negative fixed charge in the Al2O3 films.

AB - We report the characterization of aluminum oxide (Al2O 3) films which are grown on Si substrates by electron beam evaporator. This paper focuses on the characteristic variation of Al2O3 films depending on the different annealing techniques, such as post-deposition annealing and post-metallization annealing. The capacitance-voltage (C-V) curves indicate a negative charge and interface trap charge density between the Al2O3 film and Si interface. The current-voltage (I-V) curves show a leakage current. The x-ray diffraction (XRD) patterns show the crystallinity of Al2O3 films. Based on the results, the annealing effect is important condition to increase negative fixed charge in the Al2O3 films.

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