We investigated interfacial stabilities of ZrO2 films with Al and Pt electrodes formed by magnetron sputtering upon annealing and consequent changes of their metal-oxide-semiconductor capacitor characteristics. The as-deposited ZrO2 films deposited using a sputtering power of 300 W were amorphous, while after annealing in N2 at 600°C for 5 min the films became polycrystalline with a mixture of monoclinic and tetragonal phases. After the deposition of electrodes, we found that the amorphous interlayer which is presumed to be Al2O3 was formed at the ZrO2/Al interface, while platinum (Pt) electrodes showed no interlayer at the interface with ZrO2 films. The value of the capacitance equivalent thickness for the ZrO2 film with the Al electrode was larger than that of the case with the Pt electrode by about 12 Å, which is due to the presence of the additional Al2O3 interlayer at the Al/ZrO2 interface. The capacitance-voltage measurement showed that the difference in flatband voltage (VFB) between the ZrO2 films and the two different electrodes is about 1.2 V, which is due to the work function difference between the two electrode materials.
|Journal||Journal of the Electrochemical Society|
|Publication status||Published - 2003 Dec|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Materials Chemistry