Characteristics of ZnO/Si prepared by Zn                         3                         P                         2                          diffusion

Young Don Ko; Jihoun Jung; Kyu Hyun Bang; Min Chul Park; Kwang Soo Huh; Jae Min Myoung; Ilgu Yun

doi:10.1016/S0169-4332(02)00949-2

Characteristics of ZnO/Si prepared by Zn ₃ P ₂ diffusion

Young Don Ko, Jihoun Jung, Kyu Hyun Bang, Min Chul Park, Kwang Soo Huh, Jae Min Myoung, Ilgu Yun

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

p-ZnO thin film formation on Si substrate is investigated using rf magnetron sputtering followed by Zn ₃ P ₂ diffusion process. In order to form p-ZnO thin film, n-ZnO thin film is initially deposited on Si substrate using rf magnetron sputtering. Then, Zn ₃ P ₂ source diffusion by closed ampoule technique is performed on ZnO/Si test structure. The electrical and optical characteristics of the ZnO thin films are investigated and the effect of Zn ₃ P ₂ diffusion on the properties of ZnO thin films are examined. From the analysis results, it is verified that p-type ZnO thin film on p-Si substrate is formed by dopants diffusion.

Original language	English
Pages (from-to)	266-271
Number of pages	6
Journal	Applied Surface Science
Volume	202
Issue number	3-4
DOIs	https://doi.org/10.1016/S0169-4332(02)00949-2
Publication status	Published - 2002 Dec 30

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1016/S0169-4332(02)00949-2

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Ko, Y. D., Jung, J., Bang, K. H., Park, M. C., Huh, K. S., Myoung, J. M., & Yun, I. (2002). Characteristics of ZnO/Si prepared by Zn ₃ P ₂ diffusion Applied Surface Science, 202(3-4), 266-271. https://doi.org/10.1016/S0169-4332(02)00949-2

@article{bbaff7d9427c4b82bb19c13ae2ceec88,

title = " Characteristics of ZnO/Si prepared by Zn 3 P 2 diffusion ",

abstract = " p-ZnO thin film formation on Si substrate is investigated using rf magnetron sputtering followed by Zn 3 P 2 diffusion process. In order to form p-ZnO thin film, n-ZnO thin film is initially deposited on Si substrate using rf magnetron sputtering. Then, Zn 3 P 2 source diffusion by closed ampoule technique is performed on ZnO/Si test structure. The electrical and optical characteristics of the ZnO thin films are investigated and the effect of Zn 3 P 2 diffusion on the properties of ZnO thin films are examined. From the analysis results, it is verified that p-type ZnO thin film on p-Si substrate is formed by dopants diffusion.",

author = "Ko, {Young Don} and Jihoun Jung and Bang, {Kyu Hyun} and Park, {Min Chul} and Huh, {Kwang Soo} and Myoung, {Jae Min} and Ilgu Yun",

year = "2002",

month = dec,

day = "30",

doi = "10.1016/S0169-4332(02)00949-2",

language = "English",

volume = "202",

pages = "266--271",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

number = "3-4",

}

Ko, YD, Jung, J, Bang, KH, Park, MC, Huh, KS, Myoung, JM & Yun, I 2002, ' Characteristics of ZnO/Si prepared by Zn ₃ P ₂ diffusion ', Applied Surface Science, vol. 202, no. 3-4, pp. 266-271. https://doi.org/10.1016/S0169-4332(02)00949-2

Characteristics of ZnO/Si prepared by Zn ₃ P ₂ diffusion . / Ko, Young Don; Jung, Jihoun; Bang, Kyu Hyun et al.
In: Applied Surface Science, Vol. 202, No. 3-4, 30.12.2002, p. 266-271.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Characteristics of ZnO/Si prepared by Zn 3 P 2 diffusion

AU - Ko, Young Don

AU - Jung, Jihoun

AU - Bang, Kyu Hyun

AU - Park, Min Chul

AU - Huh, Kwang Soo

AU - Myoung, Jae Min

AU - Yun, Ilgu

PY - 2002/12/30

Y1 - 2002/12/30

N2 - p-ZnO thin film formation on Si substrate is investigated using rf magnetron sputtering followed by Zn 3 P 2 diffusion process. In order to form p-ZnO thin film, n-ZnO thin film is initially deposited on Si substrate using rf magnetron sputtering. Then, Zn 3 P 2 source diffusion by closed ampoule technique is performed on ZnO/Si test structure. The electrical and optical characteristics of the ZnO thin films are investigated and the effect of Zn 3 P 2 diffusion on the properties of ZnO thin films are examined. From the analysis results, it is verified that p-type ZnO thin film on p-Si substrate is formed by dopants diffusion.

AB - p-ZnO thin film formation on Si substrate is investigated using rf magnetron sputtering followed by Zn 3 P 2 diffusion process. In order to form p-ZnO thin film, n-ZnO thin film is initially deposited on Si substrate using rf magnetron sputtering. Then, Zn 3 P 2 source diffusion by closed ampoule technique is performed on ZnO/Si test structure. The electrical and optical characteristics of the ZnO thin films are investigated and the effect of Zn 3 P 2 diffusion on the properties of ZnO thin films are examined. From the analysis results, it is verified that p-type ZnO thin film on p-Si substrate is formed by dopants diffusion.

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U2 - 10.1016/S0169-4332(02)00949-2

DO - 10.1016/S0169-4332(02)00949-2

M3 - Article

AN - SCOPUS:0037203069

SN - 0169-4332

VL - 202

SP - 266

EP - 271

JO - Applied Surface Science

JF - Applied Surface Science

IS - 3-4

ER -

Characteristics of ZnO/Si prepared by Zn ₃ P ₂ diffusion

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