Characteristics of ultrathin SiO2 films using dry rapid thermal oxidation and Pt catalyzed wet oxidation

M. H. Cho; J. S. Shin; Y. S. Roh; I. W. Lyo; K. Jeong; C. N. Whang; J. S. Lee; J. Y. Yoo; N. I. Lee; K. Fujihara; Dae Won Moon

doi:10.1116/1.1582455

Characteristics of ultrathin SiO₂ films using dry rapid thermal oxidation and Pt catalyzed wet oxidation

M. H. Cho, J. S. Shin, Y. S. Roh, I. W. Lyo, K. Jeong, C. N. Whang, J. S. Lee, J. Y. Yoo, N. I. Lee, K. Fujihara, Dae Won Moon

Department of Physics

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The defects in the gate oxide were directly characterized by MEIS and HRXPS measurements. Furthermore, it was observed that there is a clear difference between STM images of dry and wet oxidized samples in the defect generation rate and TDDB. These results strongly suggest that the wet oxide using H₂O formed by catalysis of Pt has a smoother interfacial roughness and fewer defects than the dry oxide.

Original language	English
Pages (from-to)	1004-1008
Number of pages	5
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	21
Issue number	4
DOIs	https://doi.org/10.1116/1.1582455
Publication status	Published - 2003 Jul

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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Cho, M. H., Shin, J. S., Roh, Y. S., Lyo, I. W., Jeong, K., Whang, C. N., Lee, J. S., Yoo, J. Y., Lee, N. I., Fujihara, K., & Moon, D. W. (2003). Characteristics of ultrathin SiO₂ films using dry rapid thermal oxidation and Pt catalyzed wet oxidation. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 21(4), 1004-1008. https://doi.org/10.1116/1.1582455

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abstract = "The defects in the gate oxide were directly characterized by MEIS and HRXPS measurements. Furthermore, it was observed that there is a clear difference between STM images of dry and wet oxidized samples in the defect generation rate and TDDB. These results strongly suggest that the wet oxide using H2O formed by catalysis of Pt has a smoother interfacial roughness and fewer defects than the dry oxide.",

author = "Cho, {M. H.} and Shin, {J. S.} and Roh, {Y. S.} and Lyo, {I. W.} and K. Jeong and Whang, {C. N.} and Lee, {J. S.} and Yoo, {J. Y.} and Lee, {N. I.} and K. Fujihara and Moon, {Dae Won}",

year = "2003",

month = jul,

doi = "10.1116/1.1582455",

language = "English",

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pages = "1004--1008",

journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",

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T1 - Characteristics of ultrathin SiO2 films using dry rapid thermal oxidation and Pt catalyzed wet oxidation

AU - Cho, M. H.

AU - Shin, J. S.

AU - Roh, Y. S.

AU - Lyo, I. W.

AU - Jeong, K.

AU - Whang, C. N.

AU - Lee, J. S.

AU - Yoo, J. Y.

AU - Lee, N. I.

AU - Fujihara, K.

AU - Moon, Dae Won

PY - 2003/7

Y1 - 2003/7

N2 - The defects in the gate oxide were directly characterized by MEIS and HRXPS measurements. Furthermore, it was observed that there is a clear difference between STM images of dry and wet oxidized samples in the defect generation rate and TDDB. These results strongly suggest that the wet oxide using H2O formed by catalysis of Pt has a smoother interfacial roughness and fewer defects than the dry oxide.

AB - The defects in the gate oxide were directly characterized by MEIS and HRXPS measurements. Furthermore, it was observed that there is a clear difference between STM images of dry and wet oxidized samples in the defect generation rate and TDDB. These results strongly suggest that the wet oxide using H2O formed by catalysis of Pt has a smoother interfacial roughness and fewer defects than the dry oxide.

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JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 4

ER -

Characteristics of ultrathin SiO₂ films using dry rapid thermal oxidation and Pt catalyzed wet oxidation

Abstract

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