Characteristics of PECVD grown tungsten nitride films as diffusion barrier layers for ULSI DRAM applications

Engineering

• Nitride 100%
• Barrier Layer 16%
• Plasma Enhanced Chemical Vapor Deposition 16%
• Aspect Ratio 8%
• Annealing 8%
• Diffusion Barrier 8%
• Deposited Film 8%
• Rapid Thermal Annealing 8%
• ULSI Circuits 8%
• Applications 8%
• Coverage 8%
• Characteristics 8%
• Transforms 8%

Material Science

• Liquid Films 50%
• Contact Resistance 16%
• Barrier Material 16%
• Crystalline Material 8%
• Devices 8%
• Materials Application 8%
• Amorphous Material 8%

Physics

• Tungsten 33%
• Surface Properties 16%
• Annealing 8%
• Electrical Resistivity 8%
• Aspect Ratio 8%
• Utilization 8%
• Ratios 8%
• Gas Flow 8%