Characteristics of La2O3 thin films deposited using metal organic chemical vapor deposition with different oxidant gas

Hyo June Kim; Jin Hyung Jun; Doo Jin Choi

doi:10.1016/j.ceramint.2007.09.071

Characteristics of La₂O₃ thin films deposited using metal organic chemical vapor deposition with different oxidant gas

Hyo June Kim, Jin Hyung Jun, Doo Jin Choi

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

La₂O₃ films were deposited using O₃ and the structural and electrical properties were investigated and compared with those of La₂O₃ films deposited using O₂. The deposition temperature of the La₂O₃ films using O₃ was slightly reduced compared to that of the La₂O₃ films generated using O₂. After a post-annealing process at 600 and 900 °C, the crystallinity of the La₂O₃ films using O₃ were smaller than that using O₂. The leakage current density increased after annealing at 600 °C due to densification and then decreased after annealing at 900 °C due to interfacial layer growth. The effective dielectric constant of the La₂O₃ films deposited using O₃ decreased at 900 °C due to interfacial layer growth. The La₂O₃ films deposited using O₃ showed better structural and electrical properties in this study.

Original language	English
Pages (from-to)	953-956
Number of pages	4
Journal	Ceramics International
Volume	34
Issue number	4
DOIs	https://doi.org/10.1016/j.ceramint.2007.09.071
Publication status	Published - 2008 May

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Process Chemistry and Technology
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/j.ceramint.2007.09.071

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title = "Characteristics of La2O3 thin films deposited using metal organic chemical vapor deposition with different oxidant gas",

abstract = "La2O3 films were deposited using O3 and the structural and electrical properties were investigated and compared with those of La2O3 films deposited using O2. The deposition temperature of the La2O3 films using O3 was slightly reduced compared to that of the La2O3 films generated using O2. After a post-annealing process at 600 and 900 °C, the crystallinity of the La2O3 films using O3 were smaller than that using O2. The leakage current density increased after annealing at 600 °C due to densification and then decreased after annealing at 900 °C due to interfacial layer growth. The effective dielectric constant of the La2O3 films deposited using O3 decreased at 900 °C due to interfacial layer growth. The La2O3 films deposited using O3 showed better structural and electrical properties in this study.",

author = "Kim, {Hyo June} and Jun, {Jin Hyung} and Choi, {Doo Jin}",

year = "2008",

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doi = "10.1016/j.ceramint.2007.09.071",

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journal = "Ceramics International",

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AU - Kim, Hyo June

AU - Jun, Jin Hyung

AU - Choi, Doo Jin

PY - 2008/5

Y1 - 2008/5

N2 - La2O3 films were deposited using O3 and the structural and electrical properties were investigated and compared with those of La2O3 films deposited using O2. The deposition temperature of the La2O3 films using O3 was slightly reduced compared to that of the La2O3 films generated using O2. After a post-annealing process at 600 and 900 °C, the crystallinity of the La2O3 films using O3 were smaller than that using O2. The leakage current density increased after annealing at 600 °C due to densification and then decreased after annealing at 900 °C due to interfacial layer growth. The effective dielectric constant of the La2O3 films deposited using O3 decreased at 900 °C due to interfacial layer growth. The La2O3 films deposited using O3 showed better structural and electrical properties in this study.

AB - La2O3 films were deposited using O3 and the structural and electrical properties were investigated and compared with those of La2O3 films deposited using O2. The deposition temperature of the La2O3 films using O3 was slightly reduced compared to that of the La2O3 films generated using O2. After a post-annealing process at 600 and 900 °C, the crystallinity of the La2O3 films using O3 were smaller than that using O2. The leakage current density increased after annealing at 600 °C due to densification and then decreased after annealing at 900 °C due to interfacial layer growth. The effective dielectric constant of the La2O3 films deposited using O3 decreased at 900 °C due to interfacial layer growth. The La2O3 films deposited using O3 showed better structural and electrical properties in this study.

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Characteristics of La₂O₃ thin films deposited using metal organic chemical vapor deposition with different oxidant gas

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