Characteristics of interfacial strains developed in silicon by wet O2 oxidation

D. W. Shin, Y. H. You, D. J. Choi, G. H. Kim

Research output: Contribution to journalArticlepeer-review


The interfacial strains that developed in silicon wafer during wet oxidation were studied using convergent electron beam diffraction (CBED) analysis. For the observation of the stacking faults at the Si/SiO2 interface, the oxide layer was removed by hydrofluoric acid and the silicon surface was etched. The lattice strain was tensile at the interface and diminished sharply towards zero at about 1.5 μm from the Si/SiO2 interfaces. Tensile thermal strain was observed at the interface because the thermal expansion coefficient of silicon is five times larger than that of SiO2.

Original languageEnglish
Pages (from-to)755-757
Number of pages3
JournalJournal of Materials Science Letters
Issue number10
Publication statusPublished - 1999

Bibliographical note

Funding Information:
This work was supported by the Korean Ministry of

All Science Journal Classification (ASJC) codes

  • General Materials Science


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