Characteristics of interfacial bonding distribution of Gd2O3-GaAs structure

Jun Kyu Yang, Min Gu Kang, Hyung Ho Park

Research output: Contribution to journalConference articlepeer-review

8 Citations (Scopus)


Gd2O3 films are electron beam (e-beam) evaporated on GaAs at room temperature. The bonding natures of the Gd2O3/GaAs interface are characterized using Auger electron spectroscopy and X-ray photoelectron spectroscopy. LMM Auger lines clearly demonstrate the oxide-related chemical state. After the deposition of Gd2O3 on S-passivated GaAs, GaAs oxides were not formed at the interface but the generation of interfacial excess As is observed. The generation of elemental excess As can be explained by the dissociation of As-S bonds. However, interfacial modification could be minimized through in situ thermal hydrogenation of S-passivated GaAs before Gd2O3 deposition. The high-frequency capacitance-voltage (C-V) measurements showed an effective decrease of the interface state. The characteristics of deposition-induced interfacial modification and bonding distribution in Gd2O3/GaAs interface are discussed.

Original languageEnglish
Pages (from-to)161-167
Number of pages7
Issue number1
Publication statusPublished - 2002 Sept 2
Event2nd International Seminar On Semiconductor Surface Passivation (SSP'2001) - Ustron, Poland
Duration: 2001 Sept 102001 Sept 13

Bibliographical note

Funding Information:
The authors wish to acknowledge the financial support of the Korea Research Foundation made in the program year of 2000 and Brain Korea 21 project.

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films


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