Abstract
The chemical and electrical characteristics of HfO2 dielectric layers grown on the p-type Si substrate by the metalorganic molecular beam epitaxy (MOMBE) technique were investigated. The XPS spectra showed that the Hf 4f and O 1s peaks shifted to the higher level of binding energy due to the charge 1transfer effect. Electrical properties were analyzed by C-V and I-V measurements. The distortion of C-V curve at depletion region is attributed to the effect of deep trap levels' existence. Saturation capacitance and leakage current density were in the range of 207-249 pF and 0.52-0.58 A/cm2 respectively, and the flat band voltage shift to the higher voltage appeared as the oxygen flow rate increased.
| Original language | English |
|---|---|
| Pages (from-to) | 1005-1008 |
| Number of pages | 4 |
| Journal | Materials Science Forum |
| Volume | 449-452 |
| Issue number | II |
| Publication status | Published - 2004 |
| Event | Designing, Processing and Properties of Advanced Engineering Materials: Proceedings on the 3rd International Symposium on Designing, Processing and Properties of Advanced Engineering Materials - Jeju Island, Korea, Republic of Duration: 2003 Nov 5 → 2003 Nov 8 |
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering