Characteristics of ferroelectric gate transistor using Nd 2Ti2O7/HfO2/Si structures

Woo Sik Kim; Chang K. Lee; Jun Kyu Yang; Hyung H. Park

doi:10.1080/10584580490894690

Characteristics of ferroelectric gate transistor using Nd ₂Ti₂O₇/HfO₂/Si structures

Woo Sik Kim, Chang K. Lee, Jun Kyu Yang, Hyung H. Park

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We report the fabrication and characterization of ferroelectric-gate field-effect transistor using a Nd₂Ti₂O ₇(NTO)/HfO₂/Si structure. NTO and HfO₂ films were formed by chemical solution deposition and DC magnetron sputtering method, respectively. The crystalline properties of the films were characterized by X-ray diffraction. The memory windows were in the range of 0.59 V to 1.55 V when the applied voltage varied from 2 V to 6 V. The capacitance decreased by 15% after retention time of 5000 s at ±5 writing pulse voltages. The relationship between electrical characteristics and interfacial properties were discussed.

Original language	English
Pages (from-to)	269-276
Number of pages	8
Journal	Integrated Ferroelectrics
Volume	64
DOIs	https://doi.org/10.1080/10584580490894690
Publication status	Published - 2004

Bibliographical note

Funding Information:
This work was supported by Korea Research Foundation Grant (KRF-2003-041-D00375).

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Control and Systems Engineering
Ceramics and Composites
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1080/10584580490894690

Cite this

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title = "Characteristics of ferroelectric gate transistor using Nd 2Ti2O7/HfO2/Si structures",

abstract = "We report the fabrication and characterization of ferroelectric-gate field-effect transistor using a Nd2Ti2O 7(NTO)/HfO2/Si structure. NTO and HfO2 films were formed by chemical solution deposition and DC magnetron sputtering method, respectively. The crystalline properties of the films were characterized by X-ray diffraction. The memory windows were in the range of 0.59 V to 1.55 V when the applied voltage varied from 2 V to 6 V. The capacitance decreased by 15% after retention time of 5000 s at ±5 writing pulse voltages. The relationship between electrical characteristics and interfacial properties were discussed.",

author = "Kim, {Woo Sik} and Lee, {Chang K.} and Yang, {Jun Kyu} and Park, {Hyung H.}",

note = "Funding Information: This work was supported by Korea Research Foundation Grant (KRF-2003-041-D00375).",

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T1 - Characteristics of ferroelectric gate transistor using Nd 2Ti2O7/HfO2/Si structures

AU - Kim, Woo Sik

AU - Lee, Chang K.

AU - Yang, Jun Kyu

AU - Park, Hyung H.

N1 - Funding Information: This work was supported by Korea Research Foundation Grant (KRF-2003-041-D00375).

PY - 2004

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AB - We report the fabrication and characterization of ferroelectric-gate field-effect transistor using a Nd2Ti2O 7(NTO)/HfO2/Si structure. NTO and HfO2 films were formed by chemical solution deposition and DC magnetron sputtering method, respectively. The crystalline properties of the films were characterized by X-ray diffraction. The memory windows were in the range of 0.59 V to 1.55 V when the applied voltage varied from 2 V to 6 V. The capacitance decreased by 15% after retention time of 5000 s at ±5 writing pulse voltages. The relationship between electrical characteristics and interfacial properties were discussed.

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