Characteristics of ferroelectric gate transistor using Nd 2Ti2O7/HfO2/Si structures

Woo Sik Kim, Chang K. Lee, Jun Kyu Yang, Hyung H. Park

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


We report the fabrication and characterization of ferroelectric-gate field-effect transistor using a Nd2Ti2O 7(NTO)/HfO2/Si structure. NTO and HfO2 films were formed by chemical solution deposition and DC magnetron sputtering method, respectively. The crystalline properties of the films were characterized by X-ray diffraction. The memory windows were in the range of 0.59 V to 1.55 V when the applied voltage varied from 2 V to 6 V. The capacitance decreased by 15% after retention time of 5000 s at ±5 writing pulse voltages. The relationship between electrical characteristics and interfacial properties were discussed.

Original languageEnglish
Pages (from-to)269-276
Number of pages8
JournalIntegrated Ferroelectrics
Publication statusPublished - 2004

Bibliographical note

Funding Information:
This work was supported by Korea Research Foundation Grant (KRF-2003-041-D00375).

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Control and Systems Engineering
  • Ceramics and Composites
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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