Characteristics of double-gate gainzno thin-film transistor

Kyoung Seok Son; Ji Sim Jung; Kwang Hee Lee; Tae Sang Kim; Joon Seok Park; Yun Hyuk Choi; Keechan Park; Jang Yeon Kwon; Bonwon Koo; Sang Yoon Lee

doi:10.1109/LED.2009.2038805

Characteristics of double-gate gainzno thin-film transistor

Kyoung Seok Son, Ji Sim Jung, Kwang Hee Lee, Tae Sang Kim, Joon Seok Park, Yun Hyuk Choi, Keechan Park, Jang Yeon Kwon, Bonwon Koo, Sang Yoon Lee

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

56 Citations (Scopus)

Abstract

A GaInZnO thin-film transistor with double-gate structure is reported. Enhancement-mode operation that is essential to the constitution of a low-power digital circuitry is easily achieved when the upper and lower gate electrodes are tied together. The saturation mobility and the subthreshold swing are improved from 3.65 cm²/(V s) and 0.44 V/dec to 18.9 cm²/(V s) and 0.14 V/dec, respectively, compared with the single-gate structure. We can modulate the threshold voltage of either gate by adjusting the bias on the other gate.

Original language	English
Article number	5406126
Pages (from-to)	219-221
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	31
Issue number	3
DOIs	https://doi.org/10.1109/LED.2009.2038805
Publication status	Published - 2010 Mar

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2009.2038805

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abstract = "A GaInZnO thin-film transistor with double-gate structure is reported. Enhancement-mode operation that is essential to the constitution of a low-power digital circuitry is easily achieved when the upper and lower gate electrodes are tied together. The saturation mobility and the subthreshold swing are improved from 3.65 cm2/(V s) and 0.44 V/dec to 18.9 cm2/(V s) and 0.14 V/dec, respectively, compared with the single-gate structure. We can modulate the threshold voltage of either gate by adjusting the bias on the other gate.",

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AU - Son, Kyoung Seok

AU - Jung, Ji Sim

AU - Lee, Kwang Hee

AU - Kim, Tae Sang

AU - Park, Joon Seok

AU - Choi, Yun Hyuk

AU - Park, Keechan

AU - Kwon, Jang Yeon

AU - Koo, Bonwon

AU - Lee, Sang Yoon

PY - 2010/3

Y1 - 2010/3

N2 - A GaInZnO thin-film transistor with double-gate structure is reported. Enhancement-mode operation that is essential to the constitution of a low-power digital circuitry is easily achieved when the upper and lower gate electrodes are tied together. The saturation mobility and the subthreshold swing are improved from 3.65 cm2/(V s) and 0.44 V/dec to 18.9 cm2/(V s) and 0.14 V/dec, respectively, compared with the single-gate structure. We can modulate the threshold voltage of either gate by adjusting the bias on the other gate.

AB - A GaInZnO thin-film transistor with double-gate structure is reported. Enhancement-mode operation that is essential to the constitution of a low-power digital circuitry is easily achieved when the upper and lower gate electrodes are tied together. The saturation mobility and the subthreshold swing are improved from 3.65 cm2/(V s) and 0.44 V/dec to 18.9 cm2/(V s) and 0.14 V/dec, respectively, compared with the single-gate structure. We can modulate the threshold voltage of either gate by adjusting the bias on the other gate.

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Characteristics of double-gate gainzno thin-film transistor

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