Characteristics of double-gate gainzno thin-film transistor

Kyoung Seok Son, Ji Sim Jung, Kwang Hee Lee, Tae Sang Kim, Joon Seok Park, Yun Hyuk Choi, Keechan Park, Jang Yeon Kwon, Bonwon Koo, Sang Yoon Lee

Research output: Contribution to journalArticlepeer-review

56 Citations (Scopus)


A GaInZnO thin-film transistor with double-gate structure is reported. Enhancement-mode operation that is essential to the constitution of a low-power digital circuitry is easily achieved when the upper and lower gate electrodes are tied together. The saturation mobility and the subthreshold swing are improved from 3.65 cm2/(V s) and 0.44 V/dec to 18.9 cm2/(V s) and 0.14 V/dec, respectively, compared with the single-gate structure. We can modulate the threshold voltage of either gate by adjusting the bias on the other gate.

Original languageEnglish
Article number5406126
Pages (from-to)219-221
Number of pages3
JournalIEEE Electron Device Letters
Issue number3
Publication statusPublished - 2010 Mar

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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