Characteristics of diodes prepared using epitaxial CoSi2 as a boron diffusion source

Gi Bum Kim; Joon Seop Kwak; Hong Koo Baik; Sung Man Lee

doi:10.1116/1.1288204

Characteristics of diodes prepared using epitaxial CoSi₂ as a boron diffusion source

Gi Bum Kim, Joon Seop Kwak, Hong Koo Baik, Sung Man Lee

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The silicide-as-a-doping-source (SADS) process was used to manufacture a low leakage, shallow p+n junction. The SADS process uses epitaxial CoSi₂ films formed by the Co/Ti/Si system. The film exhibited very low reverse leakage current density when the silicide formation temperature was at 800 °C. The reverse leakage current density increased significantly when the temperature was increased to 900 °C.

Original language	English
Pages (from-to)	2576-2578
Number of pages	3
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	18
Issue number	5
DOIs	https://doi.org/10.1116/1.1288204
Publication status	Published - 2000 Sept

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.1288204

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title = "Characteristics of diodes prepared using epitaxial CoSi2 as a boron diffusion source",

abstract = "The silicide-as-a-doping-source (SADS) process was used to manufacture a low leakage, shallow p+n junction. The SADS process uses epitaxial CoSi2 films formed by the Co/Ti/Si system. The film exhibited very low reverse leakage current density when the silicide formation temperature was at 800 °C. The reverse leakage current density increased significantly when the temperature was increased to 900 °C.",

author = "Kim, {Gi Bum} and Kwak, {Joon Seop} and Baik, {Hong Koo} and Lee, {Sung Man}",

year = "2000",

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AU - Kim, Gi Bum

AU - Kwak, Joon Seop

AU - Baik, Hong Koo

AU - Lee, Sung Man

PY - 2000/9

Y1 - 2000/9

N2 - The silicide-as-a-doping-source (SADS) process was used to manufacture a low leakage, shallow p+n junction. The SADS process uses epitaxial CoSi2 films formed by the Co/Ti/Si system. The film exhibited very low reverse leakage current density when the silicide formation temperature was at 800 °C. The reverse leakage current density increased significantly when the temperature was increased to 900 °C.

AB - The silicide-as-a-doping-source (SADS) process was used to manufacture a low leakage, shallow p+n junction. The SADS process uses epitaxial CoSi2 films formed by the Co/Ti/Si system. The film exhibited very low reverse leakage current density when the silicide formation temperature was at 800 °C. The reverse leakage current density increased significantly when the temperature was increased to 900 °C.

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ER -

Characteristics of diodes prepared using epitaxial CoSi₂ as a boron diffusion source

Abstract

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