Characteristics of chemical-vapor-deposited copper on the Cu-seeded TiN substrates

Seok Kim, Doo Jin Choi, Kyoung Ryul Yoon, Ki Hwan Kim, Seok Keun Koh

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22 Citations (Scopus)


Cu film was deposited by a MOCVD (Metal Organic Chemical Vapor Deposition) process on Cu-5, 40 Å, 130 Å seeded TiN and an as-received TiN substrate using 1,1,1,5,5,5-hexafluoroacetylacetonate-2,4-pentadionate (vinyltrimethylsilane) Copper(I) as a Cu precursor. The seeding process was carried out by PIBD (Partially Ionized Beam Deposition) process. By the presence of a seeding layer, the deposition rate of CVD-Cu films was slightly increased, the (111) preferred orientation was enhanced in the case of 130 Å seeding, and especially the continuity of Cu-grains was improved in the surface-reaction-limited region. The improvement of continuity decreased the resistivity of CVD-Cu films; minimum value of 2.42 μΩ · cm. After a vacuum (about 3 × 10-5 Torr) annealing process at temperatures of 400, 500, and 600°C for 30 min, Cu grains grew and coalesced with each other. This sintering effect reduced the resistivity of CVD-Cu films and was prominent in the case of seeding.

Original languageEnglish
Pages (from-to)218-224
Number of pages7
JournalThin Solid Films
Issue number1-2
Publication statusPublished - 1997 Dec 31

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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