TY - GEN
T1 - Characteristics of Al-doped ZnO transparent conductive oxide films for solar cell applications
AU - Kim, Doo Soo
AU - Oh, Byeong Yun
AU - Jeong, Min Chang
AU - Myoung, Jae Min
PY - 2007
Y1 - 2007
N2 - Al-doped ZnO (ZnO:Al) films for transparent electrode applications in dye-sensitized solar cells and thin film solar cells were fabricated and characterized. In order to investigate the effect of crystallinity of the ZnO:Al films to the morphology and optical properties of the etched surface, the ZnO:Al films were deposited with varying substrate temperature by rf magnetron sputtering system and then films' surface was etched in diluted hydrochloric acid (HCl) solution. Surface morphology of the amorphous ZnO:Al film deposited at room temperature was controllable to have large surface area, but it was not appropriate for transparent electrode layers due to high electrical resistivity. However, the resistivities of the ZnO:Al films deposited at the substrate temperatures of 150 and 300°C were as low as 1.50×10-3 Ωcm. In addition, the surface morphologies of the films deposited at 150 and 300°C showed larger surface area for dye-sensitized cells and crater shape for light diffusion through the films, respectively. The surface morphologies and optical properties of the etched ZnO:Al films are attributed to the crystallinity of the as-fabricated films.
AB - Al-doped ZnO (ZnO:Al) films for transparent electrode applications in dye-sensitized solar cells and thin film solar cells were fabricated and characterized. In order to investigate the effect of crystallinity of the ZnO:Al films to the morphology and optical properties of the etched surface, the ZnO:Al films were deposited with varying substrate temperature by rf magnetron sputtering system and then films' surface was etched in diluted hydrochloric acid (HCl) solution. Surface morphology of the amorphous ZnO:Al film deposited at room temperature was controllable to have large surface area, but it was not appropriate for transparent electrode layers due to high electrical resistivity. However, the resistivities of the ZnO:Al films deposited at the substrate temperatures of 150 and 300°C were as low as 1.50×10-3 Ωcm. In addition, the surface morphologies of the films deposited at 150 and 300°C showed larger surface area for dye-sensitized cells and crater shape for light diffusion through the films, respectively. The surface morphologies and optical properties of the etched ZnO:Al films are attributed to the crystallinity of the as-fabricated films.
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U2 - 10.4028/3-908451-31-0.131
DO - 10.4028/3-908451-31-0.131
M3 - Conference contribution
AN - SCOPUS:38549098350
SN - 3908451310
SN - 9783908451310
T3 - Solid State Phenomena
SP - 131
EP - 134
BT - Advances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia
PB - Trans Tech Publications Ltd
T2 - IUMRS International Conference in Asia 2006, IUMRS-ICA 2006
Y2 - 10 September 2006 through 14 September 2006
ER -