Characteristics of a high temperature vertical spin valve

Debashish Basu, Hyun Kum, Pallab Bhattacharya, Dipankar Saha

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1 Citation (Scopus)


We demonstrate high temperature electrical spin injection and detection in degenerately p -doped GaAs in vertical spin valves using valence band electron tunneling. The maximum measured magnetoresistance at 10 and 300 K is 40% and ∼1%, respectively. Spin relaxation in these devices was found to be relatively insensitive to temperature (T) for T>125 K. The spin injection and detection efficiencies are mostly dominated by the ferromagnetic contact polarization and spin independent transport at the ferromagnet/semiconductor interface.

Original languageEnglish
Article number232505
JournalApplied Physics Letters
Issue number23
Publication statusPublished - 2010 Dec 6

Bibliographical note

Funding Information:
This work is supported by the Office of Naval Research (Grant No. N000140910086), National Science Foundation (Grant No. ECCS-0754367), and the Department of Science and Technology (SR/S3/EECE/0060/2009).

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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