Characteristics of a high temperature vertical spin valve

Debashish Basu; Hyun Kum; Pallab Bhattacharya; Dipankar Saha

doi:10.1063/1.3524820

Characteristics of a high temperature vertical spin valve

Debashish Basu, Hyun Kum, Pallab Bhattacharya, Dipankar Saha

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

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Abstract

We demonstrate high temperature electrical spin injection and detection in degenerately p -doped GaAs in vertical spin valves using valence band electron tunneling. The maximum measured magnetoresistance at 10 and 300 K is 40% and ∼1%, respectively. Spin relaxation in these devices was found to be relatively insensitive to temperature (T) for T>125 K. The spin injection and detection efficiencies are mostly dominated by the ferromagnetic contact polarization and spin independent transport at the ferromagnet/semiconductor interface.

Original language	English
Article number	232505
Journal	Applied Physics Letters
Volume	97
Issue number	23
DOIs	https://doi.org/10.1063/1.3524820
Publication status	Published - 2010 Dec 6

Bibliographical note

Funding Information:
This work is supported by the Office of Naval Research (Grant No. N000140910086), National Science Foundation (Grant No. ECCS-0754367), and the Department of Science and Technology (SR/S3/EECE/0060/2009).

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3524820

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title = "Characteristics of a high temperature vertical spin valve",

abstract = "We demonstrate high temperature electrical spin injection and detection in degenerately p -doped GaAs in vertical spin valves using valence band electron tunneling. The maximum measured magnetoresistance at 10 and 300 K is 40% and ∼1%, respectively. Spin relaxation in these devices was found to be relatively insensitive to temperature (T) for T>125 K. The spin injection and detection efficiencies are mostly dominated by the ferromagnetic contact polarization and spin independent transport at the ferromagnet/semiconductor interface.",

author = "Debashish Basu and Hyun Kum and Pallab Bhattacharya and Dipankar Saha",

note = "Funding Information: This work is supported by the Office of Naval Research (Grant No. N000140910086), National Science Foundation (Grant No. ECCS-0754367), and the Department of Science and Technology (SR/S3/EECE/0060/2009).",

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AU - Basu, Debashish

AU - Kum, Hyun

AU - Bhattacharya, Pallab

AU - Saha, Dipankar

N1 - Funding Information: This work is supported by the Office of Naval Research (Grant No. N000140910086), National Science Foundation (Grant No. ECCS-0754367), and the Department of Science and Technology (SR/S3/EECE/0060/2009).

PY - 2010/12/6

Y1 - 2010/12/6

N2 - We demonstrate high temperature electrical spin injection and detection in degenerately p -doped GaAs in vertical spin valves using valence band electron tunneling. The maximum measured magnetoresistance at 10 and 300 K is 40% and ∼1%, respectively. Spin relaxation in these devices was found to be relatively insensitive to temperature (T) for T>125 K. The spin injection and detection efficiencies are mostly dominated by the ferromagnetic contact polarization and spin independent transport at the ferromagnet/semiconductor interface.

AB - We demonstrate high temperature electrical spin injection and detection in degenerately p -doped GaAs in vertical spin valves using valence band electron tunneling. The maximum measured magnetoresistance at 10 and 300 K is 40% and ∼1%, respectively. Spin relaxation in these devices was found to be relatively insensitive to temperature (T) for T>125 K. The spin injection and detection efficiencies are mostly dominated by the ferromagnetic contact polarization and spin independent transport at the ferromagnet/semiconductor interface.

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ER -

Characteristics of a high temperature vertical spin valve

Abstract

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