Characteristics of a fabricated PIN photodiode for a matching with a CsI(Tl) scintillator

Han Soo Kim, Se Hwan Park, Jang Ho Ha, Dong Hoon Lee, Seung Yeon Cho

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8 Citations (Scopus)


Recently a PIN photodiode is more widely used than a conventional PMT, because it requires less bias to operate it and it is very compact. A PIN photodiode was designed and fabricated for a matching with a CsI(Tl) scintillator in consideration of low leakage current and high biasing voltage. Leakage current and spectral response were measured with the fabricated PIN photodiode as preliminary tests. A CsI(Tl)/PIN photodiode radiation detector was also fabricated and about 10.4% FWHM was achieved at 662 keV gamma-ray. In this study, characteristics of a fabricated PIN photodiode and a CsI(Tl)/PIN photodiode radiation detector were presented. Several important aspects to consider in the fabricationof a SiPIN photodiode radiation detector are also addressed.

Original languageEnglish
Article number5485165
Pages (from-to)1382-1385
Number of pages4
JournalIEEE Transactions on Nuclear Science
Issue number3 PART 2
Publication statusPublished - 2010 Jun

Bibliographical note

Funding Information:
Manuscript received June 30, 2009; revised September 04, 2009, November 03, 2009, and February 01, 2010; accepted March 13, 2010. Date of current version June 16, 2010. This work was supported in part by the BK21 program of the Korea Research Foundation (KRF). This work was carried out under the nuclear R&D program of the Ministry of Education, Science and Technology (MEST) and under the Eco-technopia 21 Project of the Ministry of Environment (ME) of Korea.

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering


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