Characteristics and processing effects of ZrO 2 thin films grown by metal-organic molecular beam epitaxy

Myoung Seok Kim, Young Don Ko, Jang Hyuk Hong, Min Chang Jeong, Jae Min Myoung, Ilgu Yun

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ZrO 2 dielectric layers were grown on the p-type Si(100) substrate by metal-organic molecular beam epitaxy (MOMBE). Zrconium t-butoxide, Zr(O t-C 4 H 9 ) 4 was used as a Zr precursor and argon gas was used as a carrier gas. The thickness of the ZrO 2 film and intermediate SiO 2 layer were measured by scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM). The properties of the ZrO 2 layers were evaluated by X-ray diffraction, X-ray photoelectron spectroscopy (XPS), high frequency (HF) capacitance-voltage (C-V) measurement, and current-voltage (I-V) measurement. C-V and I-V measurements have shown that ZrO 2 layer grown by MOMBE has a high dielectric constant (k) of 18-19 and a low-level of leakage current density. The growth rate is affected by various process variables such as substrate temperature, bubbler temperature, Ar, and O 2 gas flows. Since the ratio of O 2 and Ar gas flows are closely correlated, the effect of variations in O 2 /Ar flow ratio on growth rate is also investigated using statistical modeling methodology.

Original languageEnglish
Pages (from-to)387-398
Number of pages12
JournalApplied Surface Science
Issue number1-4
Publication statusPublished - 2004 Apr 15

Bibliographical note

Funding Information:
This work was supported by grant no. R01-2001-00271 from the Basic Research Program of the Korea Science & Engineering Foundation.

All Science Journal Classification (ASJC) codes

  • General Chemistry
  • Condensed Matter Physics
  • General Physics and Astronomy
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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