Change of resistive-switching in TiO 2 films with additional HfO 2 thin layer

Doosung Lee; Yonghun Sung; Hyunchul Sohn; Dae Hong Ko; Mann Ho Cho

doi:10.3938/jkps.60.1313

Change of resistive-switching in TiO ₂ films with additional HfO ₂ thin layer

Doosung Lee, Yonghun Sung, Hyunchul Sohn, Dae Hong Ko, Mann Ho Cho

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We have fabricated TiN/(HfO ₂)/TiO ₂/Pt/Ti stacks on SiO ₂/Si substrates and investigated the characteristics of the bipolar resistive switching of those stacks. Compared to the single TiO ₂ structure, more stable bipolar switching in the current-voltage curve was accomplished in the HfO ₂/TiO ₂ structure. We obtained a smaller range of SET variation, a larger sensing margin, and higher resistance values of the high-resistance state with an additional HfO ₂ layer. Especially, in the case of the HfO ₂/TiO ₂ structure, the set voltage was decreased after O ₂ annealing. The heat treatment in an ambient of O ₂ and an additional HfO ₂ layer can improve the bipolar resistive switching behavior for resistive random access memory applications.

Original language	English
Pages (from-to)	1313-1316
Number of pages	4
Journal	Journal of the Korean Physical Society
Volume	60
Issue number	9
DOIs	https://doi.org/10.3938/jkps.60.1313
Publication status	Published - 2012 May

Bibliographical note

Funding Information:
This work was supported by the Industry-university Cooperation Project of Hynix Semiconductor Inc., “National Program for 0.1-Terabit Nonvolatile Memory Device Development”.

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

Access to Document

10.3938/jkps.60.1313

Cite this

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title = "Change of resistive-switching in TiO 2 films with additional HfO 2 thin layer",

abstract = "We have fabricated TiN/(HfO 2)/TiO 2/Pt/Ti stacks on SiO 2/Si substrates and investigated the characteristics of the bipolar resistive switching of those stacks. Compared to the single TiO 2 structure, more stable bipolar switching in the current-voltage curve was accomplished in the HfO 2/TiO 2 structure. We obtained a smaller range of SET variation, a larger sensing margin, and higher resistance values of the high-resistance state with an additional HfO 2 layer. Especially, in the case of the HfO 2/TiO 2 structure, the set voltage was decreased after O 2 annealing. The heat treatment in an ambient of O 2 and an additional HfO 2 layer can improve the bipolar resistive switching behavior for resistive random access memory applications.",

author = "Doosung Lee and Yonghun Sung and Hyunchul Sohn and Ko, {Dae Hong} and Cho, {Mann Ho}",

note = "Funding Information: This work was supported by the Industry-university Cooperation Project of Hynix Semiconductor Inc., “National Program for 0.1-Terabit Nonvolatile Memory Device Development”.",

year = "2012",

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T1 - Change of resistive-switching in TiO 2 films with additional HfO 2 thin layer

AU - Lee, Doosung

AU - Sung, Yonghun

AU - Sohn, Hyunchul

AU - Ko, Dae Hong

AU - Cho, Mann Ho

N1 - Funding Information: This work was supported by the Industry-university Cooperation Project of Hynix Semiconductor Inc., “National Program for 0.1-Terabit Nonvolatile Memory Device Development”.

PY - 2012/5

Y1 - 2012/5

N2 - We have fabricated TiN/(HfO 2)/TiO 2/Pt/Ti stacks on SiO 2/Si substrates and investigated the characteristics of the bipolar resistive switching of those stacks. Compared to the single TiO 2 structure, more stable bipolar switching in the current-voltage curve was accomplished in the HfO 2/TiO 2 structure. We obtained a smaller range of SET variation, a larger sensing margin, and higher resistance values of the high-resistance state with an additional HfO 2 layer. Especially, in the case of the HfO 2/TiO 2 structure, the set voltage was decreased after O 2 annealing. The heat treatment in an ambient of O 2 and an additional HfO 2 layer can improve the bipolar resistive switching behavior for resistive random access memory applications.

AB - We have fabricated TiN/(HfO 2)/TiO 2/Pt/Ti stacks on SiO 2/Si substrates and investigated the characteristics of the bipolar resistive switching of those stacks. Compared to the single TiO 2 structure, more stable bipolar switching in the current-voltage curve was accomplished in the HfO 2/TiO 2 structure. We obtained a smaller range of SET variation, a larger sensing margin, and higher resistance values of the high-resistance state with an additional HfO 2 layer. Especially, in the case of the HfO 2/TiO 2 structure, the set voltage was decreased after O 2 annealing. The heat treatment in an ambient of O 2 and an additional HfO 2 layer can improve the bipolar resistive switching behavior for resistive random access memory applications.

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