Change of resistive-switching in TiO 2 films with additional HfO 2 thin layer

Doosung Lee, Yonghun Sung, Hyunchul Sohn, Dae Hong Ko, Mann Ho Cho

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


We have fabricated TiN/(HfO 2)/TiO 2/Pt/Ti stacks on SiO 2/Si substrates and investigated the characteristics of the bipolar resistive switching of those stacks. Compared to the single TiO 2 structure, more stable bipolar switching in the current-voltage curve was accomplished in the HfO 2/TiO 2 structure. We obtained a smaller range of SET variation, a larger sensing margin, and higher resistance values of the high-resistance state with an additional HfO 2 layer. Especially, in the case of the HfO 2/TiO 2 structure, the set voltage was decreased after O 2 annealing. The heat treatment in an ambient of O 2 and an additional HfO 2 layer can improve the bipolar resistive switching behavior for resistive random access memory applications.

Original languageEnglish
Pages (from-to)1313-1316
Number of pages4
JournalJournal of the Korean Physical Society
Issue number9
Publication statusPublished - 2012 May

Bibliographical note

Funding Information:
This work was supported by the Industry-university Cooperation Project of Hynix Semiconductor Inc., “National Program for 0.1-Terabit Nonvolatile Memory Device Development”.

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)


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