Change in band alignment of nitrided Hf-silicate films grown on Ge(001) using gaseous NH3

Y. J. Cho; J. W. Mah; C. Y. Kim; H. Kim; H. J. Lee; H. J. Kang; D. W. Moon; S. O. Kim; M. H. Cho

doi:10.1149/1.3322614

Change in band alignment of nitrided Hf-silicate films grown on Ge(001) using gaseous NH₃

Y. J. Cho, J. W. Mah, C. Y. Kim, H. Kim, H. J. Lee, H. J. Kang, D. W. Moon, S. O. Kim, M. H. Cho

Department of Physics

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The thermal stability and interfacial reactions of nitrided Hf-silicate [(HfO₂)_x(SiO₂)_1-x] thin films grown on Ge(001) substrate by atomic layer deposition were investigated. Bandgap and valence band offset were evaluated as a function of the quantity of SiO ₂ in the silicate film and nitridation temperature. After nitridation, the conduction band offset was decreased by 0.12 eV (x=0.5) and 0.39 eV (x=0.75), while the valence band offset was decreased by 0.58 eV (x=0.5) and 0.01 eV (x=0.75). In addition, the bandgap change was significantly affected by the stoichiometry of the films. The band alignment was closely consistent with the amount of nitrogen incorporated into the interfacial region of the film.

Original language	English
Pages (from-to)	G33-G36
Journal	Electrochemical and Solid-State Letters
Volume	13
Issue number	5
DOIs	https://doi.org/10.1149/1.3322614
Publication status	Published - 2010

All Science Journal Classification (ASJC) codes

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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title = "Change in band alignment of nitrided Hf-silicate films grown on Ge(001) using gaseous NH3",

abstract = "The thermal stability and interfacial reactions of nitrided Hf-silicate [(HfO2)x(SiO2)1-x] thin films grown on Ge(001) substrate by atomic layer deposition were investigated. Bandgap and valence band offset were evaluated as a function of the quantity of SiO 2 in the silicate film and nitridation temperature. After nitridation, the conduction band offset was decreased by 0.12 eV (x=0.5) and 0.39 eV (x=0.75), while the valence band offset was decreased by 0.58 eV (x=0.5) and 0.01 eV (x=0.75). In addition, the bandgap change was significantly affected by the stoichiometry of the films. The band alignment was closely consistent with the amount of nitrogen incorporated into the interfacial region of the film.",

author = "Cho, {Y. J.} and Mah, {J. W.} and Kim, {C. Y.} and H. Kim and Lee, {H. J.} and Kang, {H. J.} and Moon, {D. W.} and Kim, {S. O.} and Cho, {M. H.}",

year = "2010",

doi = "10.1149/1.3322614",

language = "English",

volume = "13",

pages = "G33--G36",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society, Inc.",

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TY - JOUR

T1 - Change in band alignment of nitrided Hf-silicate films grown on Ge(001) using gaseous NH3

AU - Cho, Y. J.

AU - Mah, J. W.

AU - Kim, C. Y.

AU - Kim, H.

AU - Lee, H. J.

AU - Kang, H. J.

AU - Moon, D. W.

AU - Kim, S. O.

AU - Cho, M. H.

PY - 2010

Y1 - 2010

N2 - The thermal stability and interfacial reactions of nitrided Hf-silicate [(HfO2)x(SiO2)1-x] thin films grown on Ge(001) substrate by atomic layer deposition were investigated. Bandgap and valence band offset were evaluated as a function of the quantity of SiO 2 in the silicate film and nitridation temperature. After nitridation, the conduction band offset was decreased by 0.12 eV (x=0.5) and 0.39 eV (x=0.75), while the valence band offset was decreased by 0.58 eV (x=0.5) and 0.01 eV (x=0.75). In addition, the bandgap change was significantly affected by the stoichiometry of the films. The band alignment was closely consistent with the amount of nitrogen incorporated into the interfacial region of the film.

AB - The thermal stability and interfacial reactions of nitrided Hf-silicate [(HfO2)x(SiO2)1-x] thin films grown on Ge(001) substrate by atomic layer deposition were investigated. Bandgap and valence band offset were evaluated as a function of the quantity of SiO 2 in the silicate film and nitridation temperature. After nitridation, the conduction band offset was decreased by 0.12 eV (x=0.5) and 0.39 eV (x=0.75), while the valence band offset was decreased by 0.58 eV (x=0.5) and 0.01 eV (x=0.75). In addition, the bandgap change was significantly affected by the stoichiometry of the films. The band alignment was closely consistent with the amount of nitrogen incorporated into the interfacial region of the film.

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JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

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ER -

Change in band alignment of nitrided Hf-silicate films grown on Ge(001) using gaseous NH₃

Abstract

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