Change in band alignment of Hf O2 films with annealing treatments

C. J. Yim; D. H. Ko; M. H. Jang; K. B. Chung; M. H. Cho; H. T. Jeon

doi:10.1063/1.2826270

Change in band alignment of Hf O2 films with annealing treatments

C. J. Yim, D. H. Ko, M. H. Jang, K. B. Chung, M. H. Cho, H. T. Jeon

Research output: Contribution to journal › Article › peer-review

28 Citations (Scopus)

Abstract

Energy band alignment of a nitrided Hf O2 film and dependence of the band gap (Eg) on annealing treatments with nitrogen plasma and ambient gases (N2 and O2) were studied by reflection electron energy loss spectra and x-ray photoelectron spectroscopy. We also investigated the nitrogen content in the film and its influence on the band alignment using medium energy ion scattering. The nitrogen incorporated into the Hf O2 film by directed nitrogen plasma treatment significantly decreased the band gap and band offsets, i.e., the incorporated N in the film decreased both conduction and valance band offsets. The nitrogen content in depth direction was dependent on the postannealing conditions using O2 or N2.

Original language	English
Article number	012922
Journal	Applied Physics Letters
Volume	92
Issue number	1
DOIs	https://doi.org/10.1063/1.2826270
Publication status	Published - 2008

Bibliographical note

Funding Information:
This work was partially supported by the National Program for Tera-level Nanodevices of the Ministry of Science and Technology as one of the 21 Century Frontier Programs. We gratefully acknowledge the technical advice of K. Chae, C. C. Hwang, and H.-N. Hwang at PAL on beamline 7B1.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2826270

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@article{15fae3bd250e495188bedd2585cade69,

title = "Change in band alignment of Hf O2 films with annealing treatments",

abstract = "Energy band alignment of a nitrided Hf O2 film and dependence of the band gap (Eg) on annealing treatments with nitrogen plasma and ambient gases (N2 and O2) were studied by reflection electron energy loss spectra and x-ray photoelectron spectroscopy. We also investigated the nitrogen content in the film and its influence on the band alignment using medium energy ion scattering. The nitrogen incorporated into the Hf O2 film by directed nitrogen plasma treatment significantly decreased the band gap and band offsets, i.e., the incorporated N in the film decreased both conduction and valance band offsets. The nitrogen content in depth direction was dependent on the postannealing conditions using O2 or N2.",

author = "Yim, {C. J.} and Ko, {D. H.} and Jang, {M. H.} and Chung, {K. B.} and Cho, {M. H.} and Jeon, {H. T.}",

note = "Funding Information: This work was partially supported by the National Program for Tera-level Nanodevices of the Ministry of Science and Technology as one of the 21 Century Frontier Programs. We gratefully acknowledge the technical advice of K. Chae, C. C. Hwang, and H.-N. Hwang at PAL on beamline 7B1.",

year = "2008",

doi = "10.1063/1.2826270",

language = "English",

volume = "92",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "1",

}

TY - JOUR

T1 - Change in band alignment of Hf O2 films with annealing treatments

AU - Yim, C. J.

AU - Ko, D. H.

AU - Jang, M. H.

AU - Chung, K. B.

AU - Cho, M. H.

AU - Jeon, H. T.

N1 - Funding Information: This work was partially supported by the National Program for Tera-level Nanodevices of the Ministry of Science and Technology as one of the 21 Century Frontier Programs. We gratefully acknowledge the technical advice of K. Chae, C. C. Hwang, and H.-N. Hwang at PAL on beamline 7B1.

PY - 2008

Y1 - 2008

N2 - Energy band alignment of a nitrided Hf O2 film and dependence of the band gap (Eg) on annealing treatments with nitrogen plasma and ambient gases (N2 and O2) were studied by reflection electron energy loss spectra and x-ray photoelectron spectroscopy. We also investigated the nitrogen content in the film and its influence on the band alignment using medium energy ion scattering. The nitrogen incorporated into the Hf O2 film by directed nitrogen plasma treatment significantly decreased the band gap and band offsets, i.e., the incorporated N in the film decreased both conduction and valance band offsets. The nitrogen content in depth direction was dependent on the postannealing conditions using O2 or N2.

AB - Energy band alignment of a nitrided Hf O2 film and dependence of the band gap (Eg) on annealing treatments with nitrogen plasma and ambient gases (N2 and O2) were studied by reflection electron energy loss spectra and x-ray photoelectron spectroscopy. We also investigated the nitrogen content in the film and its influence on the band alignment using medium energy ion scattering. The nitrogen incorporated into the Hf O2 film by directed nitrogen plasma treatment significantly decreased the band gap and band offsets, i.e., the incorporated N in the film decreased both conduction and valance band offsets. The nitrogen content in depth direction was dependent on the postannealing conditions using O2 or N2.

UR - http://www.scopus.com/inward/record.url?scp=38049045491&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=38049045491&partnerID=8YFLogxK

U2 - 10.1063/1.2826270

DO - 10.1063/1.2826270

M3 - Article

AN - SCOPUS:38049045491

SN - 0003-6951

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

M1 - 012922

ER -

Change in band alignment of Hf O2 films with annealing treatments

Abstract

Bibliographical note

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