Carrier-suppressing effect of scandium in InZnO systems for solution-processed thin film transistors

Yuri Choi, Gun Hee Kim, Woong Hee Jeong, Jung Hyeon Bae, Hyun Jae Kim, Jae Min Hong, Jae Woong Yu

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56 Citations (Scopus)


The carrier-suppressing effect of Sc in InZnO systems was studied using thin-film transistors (TFTs) with a sol-gel processed active channel. As the amount of Sc content increased, the off current decreased, and the threshold voltage shifted to a positive bias region. The Sc effectively controlled the oxygen vacancies and supplied free electrons. X-ray photoelectron spectroscopy (XPS) verified that the vacancy-related oxygen 1s peak decreased with increasing Sc content. The TFT performance with 14% Sc showed that a field-effect mobility and on-off ratio were 2.06 cm2 /V s and 8.02× 106, respectively.

Original languageEnglish
Article number162102
JournalApplied Physics Letters
Issue number16
Publication statusPublished - 2010 Oct 18

Bibliographical note

Funding Information:
This work was supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MOST) (Grant No. R0A-2007-000-10044-0).

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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