Carrier-suppressing effect of Mg in solution-processed Zn-Sn-O thin-film transistors

Hyun Soo Lim, You Seung Rim, Dong Lim Kim, Woong Hee Jeong, Hyun Jae Kim

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19 Citations (Scopus)


We investigated the effect of Mg addition on solution-processed Zn-Sn-O (ZTO) thin-film transistors (TFTs). Because Mg affects the optical bandgap and the metal-oxygen bond in ZTO films, the carrier concentration of Mg-Zn-Sn-O (MZTO) films was suppressed by Mg. As the molar ratio of Mg increased in the MZTO TFTs annealed at 500°C, the onoff ratio increased, and the subthreshold gate swing (S.S) decreased considerably. As a result, the MZTO TFT showed a saturation mobility of 1.00 cm 2V s, an S.S of 0.92 Vdecade, a threshold voltage (V th) of 6.60 V, and an onoff ratio of 3.15 ×10 6.

Original languageEnglish
Pages (from-to)H78-H80
JournalElectrochemical and Solid-State Letters
Issue number3
Publication statusPublished - 2012

All Science Journal Classification (ASJC) codes

  • General Chemical Engineering
  • General Materials Science
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering


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