Carrier scattering in quasi-free standing graphene on hexagonal boron nitride

Sun Jun Kim; Byeongho Park; Seung Hyo Noh; Hyong Seo Yoon; Juyeong Oh; Sanghyuk Yoo; Keonwook Kang; Byungchan Han; Seong Chan Jun

doi:10.1039/c7nr04571a

Carrier scattering in quasi-free standing graphene on hexagonal boron nitride

Sun Jun Kim, Byeongho Park, Seung Hyo Noh, Hyong Seo Yoon, Juyeong Oh, Sanghyuk Yoo, Keonwook Kang, Byungchan Han, Seong Chan Jun

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Graphene, a two-dimensional material with a honeycomb lattice, has been promoted as a next generation material because of its ultrafast charge carriers and superior electrical properties. Hexagonal boron nitride (h-BN) is an insulator explored as an ideal substrate for graphene with lattice-matching. Using raido-frequency (RF) transmission measurement which provides specific characteristics of carrier scattering in a device, we profoundly investigated the electrical properties of quasi-free standing graphene on h-BN. RF devices with graphene supported and encapsulated with h-BN were fabricated to analyze the RF signal at low temperatures from 100 to 300 K. We demonstrated the carrier behavior in graphene with thermally excited carriers and acoustic photon scattering according to heat energy. Both h-BN supported and encapsulated graphene showed a significant enhancement in RF transmission, which is close to a gold interconnector. Our device with graphene on h-BN exhibited concealed nonlinear characteristics at a specific temperature of 180 K due to the internal effects of acoustic phonon scattering, while a usual device with graphene on SiO₂/Si provided a linear variation. To anticipate the potential for electronic applications, the electrical circuit properties such as impedance, resistance, and inductance were extracted from the results of RF measurement.

Original language	English
Pages (from-to)	15934-15944
Number of pages	11
Journal	Nanoscale
Volume	9
Issue number	41
DOIs	https://doi.org/10.1039/c7nr04571a
Publication status	Published - 2017 Nov 1

Bibliographical note

Funding Information:
This work was partially supported by the National Center for Optically Assisted Mechanical Systems (no. 2015R1A5A1037668) and the Priority Research Centers Program (2009-0093823) through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (MEST), the ICT R&D program of MSIP/IITP (R0101-15-0034), the Industrial Strategic Technology Development Program through the Ministry of Trade, Industry and Energy (MOTIE, Korea) (2MR4090), the Korea Ministry of Environment as Global Top Project (2016002130005), the Development of diagnostic system for mild cognitive impairment due to Alzheimer’s disease (2015-11-1684), the Yonsei University Future-leading Research Initiative, and the Korea Research Fellowship Program (2015-11-1063).

Publisher Copyright:
© 2017 The Royal Society of Chemistry.

All Science Journal Classification (ASJC) codes

Materials Science(all)

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10.1039/c7nr04571a

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@article{9ce6e14016f94df9addacb1fc72fa46a,

title = "Carrier scattering in quasi-free standing graphene on hexagonal boron nitride",

abstract = "Graphene, a two-dimensional material with a honeycomb lattice, has been promoted as a next generation material because of its ultrafast charge carriers and superior electrical properties. Hexagonal boron nitride (h-BN) is an insulator explored as an ideal substrate for graphene with lattice-matching. Using raido-frequency (RF) transmission measurement which provides specific characteristics of carrier scattering in a device, we profoundly investigated the electrical properties of quasi-free standing graphene on h-BN. RF devices with graphene supported and encapsulated with h-BN were fabricated to analyze the RF signal at low temperatures from 100 to 300 K. We demonstrated the carrier behavior in graphene with thermally excited carriers and acoustic photon scattering according to heat energy. Both h-BN supported and encapsulated graphene showed a significant enhancement in RF transmission, which is close to a gold interconnector. Our device with graphene on h-BN exhibited concealed nonlinear characteristics at a specific temperature of 180 K due to the internal effects of acoustic phonon scattering, while a usual device with graphene on SiO2/Si provided a linear variation. To anticipate the potential for electronic applications, the electrical circuit properties such as impedance, resistance, and inductance were extracted from the results of RF measurement.",

author = "Kim, {Sun Jun} and Byeongho Park and Noh, {Seung Hyo} and Yoon, {Hyong Seo} and Juyeong Oh and Sanghyuk Yoo and Keonwook Kang and Byungchan Han and Jun, {Seong Chan}",

note = "Funding Information: This work was partially supported by the National Center for Optically Assisted Mechanical Systems (no. 2015R1A5A1037668) and the Priority Research Centers Program (2009-0093823) through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (MEST), the ICT R&D program of MSIP/IITP (R0101-15-0034), the Industrial Strategic Technology Development Program through the Ministry of Trade, Industry and Energy (MOTIE, Korea) (2MR4090), the Korea Ministry of Environment as Global Top Project (2016002130005), the Development of diagnostic system for mild cognitive impairment due to Alzheimer{\textquoteright}s disease (2015-11-1684), the Yonsei University Future-leading Research Initiative, and the Korea Research Fellowship Program (2015-11-1063). Publisher Copyright: {\textcopyright} 2017 The Royal Society of Chemistry.",

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doi = "10.1039/c7nr04571a",

language = "English",

volume = "9",

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AU - Kim, Sun Jun

AU - Park, Byeongho

AU - Noh, Seung Hyo

AU - Yoon, Hyong Seo

AU - Oh, Juyeong

AU - Yoo, Sanghyuk

AU - Kang, Keonwook

AU - Han, Byungchan

AU - Jun, Seong Chan

N1 - Funding Information: This work was partially supported by the National Center for Optically Assisted Mechanical Systems (no. 2015R1A5A1037668) and the Priority Research Centers Program (2009-0093823) through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (MEST), the ICT R&D program of MSIP/IITP (R0101-15-0034), the Industrial Strategic Technology Development Program through the Ministry of Trade, Industry and Energy (MOTIE, Korea) (2MR4090), the Korea Ministry of Environment as Global Top Project (2016002130005), the Development of diagnostic system for mild cognitive impairment due to Alzheimer’s disease (2015-11-1684), the Yonsei University Future-leading Research Initiative, and the Korea Research Fellowship Program (2015-11-1063). Publisher Copyright: © 2017 The Royal Society of Chemistry.

PY - 2017/11/1

Y1 - 2017/11/1

N2 - Graphene, a two-dimensional material with a honeycomb lattice, has been promoted as a next generation material because of its ultrafast charge carriers and superior electrical properties. Hexagonal boron nitride (h-BN) is an insulator explored as an ideal substrate for graphene with lattice-matching. Using raido-frequency (RF) transmission measurement which provides specific characteristics of carrier scattering in a device, we profoundly investigated the electrical properties of quasi-free standing graphene on h-BN. RF devices with graphene supported and encapsulated with h-BN were fabricated to analyze the RF signal at low temperatures from 100 to 300 K. We demonstrated the carrier behavior in graphene with thermally excited carriers and acoustic photon scattering according to heat energy. Both h-BN supported and encapsulated graphene showed a significant enhancement in RF transmission, which is close to a gold interconnector. Our device with graphene on h-BN exhibited concealed nonlinear characteristics at a specific temperature of 180 K due to the internal effects of acoustic phonon scattering, while a usual device with graphene on SiO2/Si provided a linear variation. To anticipate the potential for electronic applications, the electrical circuit properties such as impedance, resistance, and inductance were extracted from the results of RF measurement.

AB - Graphene, a two-dimensional material with a honeycomb lattice, has been promoted as a next generation material because of its ultrafast charge carriers and superior electrical properties. Hexagonal boron nitride (h-BN) is an insulator explored as an ideal substrate for graphene with lattice-matching. Using raido-frequency (RF) transmission measurement which provides specific characteristics of carrier scattering in a device, we profoundly investigated the electrical properties of quasi-free standing graphene on h-BN. RF devices with graphene supported and encapsulated with h-BN were fabricated to analyze the RF signal at low temperatures from 100 to 300 K. We demonstrated the carrier behavior in graphene with thermally excited carriers and acoustic photon scattering according to heat energy. Both h-BN supported and encapsulated graphene showed a significant enhancement in RF transmission, which is close to a gold interconnector. Our device with graphene on h-BN exhibited concealed nonlinear characteristics at a specific temperature of 180 K due to the internal effects of acoustic phonon scattering, while a usual device with graphene on SiO2/Si provided a linear variation. To anticipate the potential for electronic applications, the electrical circuit properties such as impedance, resistance, and inductance were extracted from the results of RF measurement.

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DO - 10.1039/c7nr04571a

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SN - 2040-3364

VL - 9

SP - 15934

EP - 15944

JO - Nanoscale

JF - Nanoscale

IS - 41

ER -

Carrier scattering in quasi-free standing graphene on hexagonal boron nitride

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