Carrier Mobility Enhancement of Tensile Strained Si and SiGe Nanowires via Surface Defect Engineering

Engineering

• Nanowire 100%
• Si Nanowires 80%
• Surfaces 80%
• Defects 80%
• Tensile Strain 60%
• Carrier Mobility 40%
• Tensiles 40%
• Enhancement 20%
• Passivation Layer 20%
• Increasing Strain 20%
• Surface Defect 20%
• Mobility Enhancement 20%
• Chemical Structure 20%
• Fracture Strain 20%
• Engineering 20%

Material Science

• Surface 80%
• Defect 80%
• Tensile Strain 60%
• Electrical Resistivity 40%
• Carrier Mobility 40%
• Al2O3 20%
• Structure (Composition) 20%
• Surface Defect 20%
• Devices 20%