We propose the use of amorphous-carbon indium zinc oxide (a-CIZO) as a channel material for thin-film transistor (TFT) fabrication. This study chose a carbon dopant as a carrier suppressor and strong oxygen binder in amorphous-indium zinc oxide (a-IZO) channel material. a-CIZO thin films were deposited using radiofrequency (RF) sputtering and postannealed at 150°C. X-ray diffraction and transmission electron microscopy analysis revealed that the film remained amorphous even after postannealing. The a-CIZO TFT postannealed at 150°C exhibited saturation field-effect mobility of 16.5 cm2 V-1 s-1 and on-off current ratio of ≥4.3 × 107.
|Number of pages||5|
|Journal||Journal of Electronic Materials|
|Publication status||Published - 2014 Nov 1|
Bibliographical noteFunding Information:
This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT, and Future Planning (NRF-2013 R1A1A1061213).
© 2014 The Minerals, Metals & Materials Society.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Materials Chemistry
- Electrical and Electronic Engineering