Carbon-incorporated amorphous indium zinc oxide thin-film transistors

S. Parthiban; K. Park; H. J. Kim; S. Yang; J. Y. Kwon

doi:10.1007/s11664-014-3333-9

Carbon-incorporated amorphous indium zinc oxide thin-film transistors

S. Parthiban, K. Park, H. J. Kim, S. Yang, J. Y. Kwon

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

We propose the use of amorphous-carbon indium zinc oxide (a-CIZO) as a channel material for thin-film transistor (TFT) fabrication. This study chose a carbon dopant as a carrier suppressor and strong oxygen binder in amorphous-indium zinc oxide (a-IZO) channel material. a-CIZO thin films were deposited using radiofrequency (RF) sputtering and postannealed at 150°C. X-ray diffraction and transmission electron microscopy analysis revealed that the film remained amorphous even after postannealing. The a-CIZO TFT postannealed at 150°C exhibited saturation field-effect mobility of 16.5 cm² V^-1 s^-1 and on-off current ratio of ≥4.3 × 10⁷.

Original language	English
Pages (from-to)	4224-4228
Number of pages	5
Journal	Journal of Electronic Materials
Volume	43
Issue number	11
DOIs	https://doi.org/10.1007/s11664-014-3333-9
Publication status	Published - 2014 Nov 1

Bibliographical note

Funding Information:
This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT, and Future Planning (NRF-2013 R1A1A1061213).

Publisher Copyright:
© 2014 The Minerals, Metals & Materials Society.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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10.1007/s11664-014-3333-9

Cite this

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title = "Carbon-incorporated amorphous indium zinc oxide thin-film transistors",

abstract = "We propose the use of amorphous-carbon indium zinc oxide (a-CIZO) as a channel material for thin-film transistor (TFT) fabrication. This study chose a carbon dopant as a carrier suppressor and strong oxygen binder in amorphous-indium zinc oxide (a-IZO) channel material. a-CIZO thin films were deposited using radiofrequency (RF) sputtering and postannealed at 150°C. X-ray diffraction and transmission electron microscopy analysis revealed that the film remained amorphous even after postannealing. The a-CIZO TFT postannealed at 150°C exhibited saturation field-effect mobility of 16.5 cm2 V-1 s-1 and on-off current ratio of ≥4.3 × 107.",

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T1 - Carbon-incorporated amorphous indium zinc oxide thin-film transistors

AU - Parthiban, S.

AU - Park, K.

AU - Kim, H. J.

AU - Yang, S.

AU - Kwon, J. Y.

N1 - Funding Information: This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT, and Future Planning (NRF-2013 R1A1A1061213). Publisher Copyright: © 2014 The Minerals, Metals & Materials Society.

PY - 2014/11/1

Y1 - 2014/11/1

N2 - We propose the use of amorphous-carbon indium zinc oxide (a-CIZO) as a channel material for thin-film transistor (TFT) fabrication. This study chose a carbon dopant as a carrier suppressor and strong oxygen binder in amorphous-indium zinc oxide (a-IZO) channel material. a-CIZO thin films were deposited using radiofrequency (RF) sputtering and postannealed at 150°C. X-ray diffraction and transmission electron microscopy analysis revealed that the film remained amorphous even after postannealing. The a-CIZO TFT postannealed at 150°C exhibited saturation field-effect mobility of 16.5 cm2 V-1 s-1 and on-off current ratio of ≥4.3 × 107.

AB - We propose the use of amorphous-carbon indium zinc oxide (a-CIZO) as a channel material for thin-film transistor (TFT) fabrication. This study chose a carbon dopant as a carrier suppressor and strong oxygen binder in amorphous-indium zinc oxide (a-IZO) channel material. a-CIZO thin films were deposited using radiofrequency (RF) sputtering and postannealed at 150°C. X-ray diffraction and transmission electron microscopy analysis revealed that the film remained amorphous even after postannealing. The a-CIZO TFT postannealed at 150°C exhibited saturation field-effect mobility of 16.5 cm2 V-1 s-1 and on-off current ratio of ≥4.3 × 107.

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JO - Journal of Electronic Materials

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IS - 11

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Carbon-incorporated amorphous indium zinc oxide thin-film transistors

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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