Carbon-incorporated amorphous indium zinc oxide thin-film transistors

S. Parthiban, K. Park, H. J. Kim, S. Yang, J. Y. Kwon

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)


We propose the use of amorphous-carbon indium zinc oxide (a-CIZO) as a channel material for thin-film transistor (TFT) fabrication. This study chose a carbon dopant as a carrier suppressor and strong oxygen binder in amorphous-indium zinc oxide (a-IZO) channel material. a-CIZO thin films were deposited using radiofrequency (RF) sputtering and postannealed at 150°C. X-ray diffraction and transmission electron microscopy analysis revealed that the film remained amorphous even after postannealing. The a-CIZO TFT postannealed at 150°C exhibited saturation field-effect mobility of 16.5 cm2 V-1 s-1 and on-off current ratio of ≥4.3 × 107.

Original languageEnglish
Pages (from-to)4224-4228
Number of pages5
JournalJournal of Electronic Materials
Issue number11
Publication statusPublished - 2014 Nov 1

Bibliographical note

Funding Information:
This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT, and Future Planning (NRF-2013 R1A1A1061213).

Publisher Copyright:
© 2014 The Minerals, Metals & Materials Society.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering


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