Bulk properties of the van der Waals hard ferromagnet VI3

Suhan Son, Matthew J. Coak, Nahyun Lee, Jonghyeon Kim, Tae Yun Kim, Hayrullo Hamidov, Hwanbeom Cho, Cheng Liu, David M. Jarvis, Philip A.C. Brown, Jae Hoon Kim, Cheol Hwan Park, Daniel I. Khomskii, Siddharth S. Saxena, Je Geun Park

Research output: Contribution to journalArticlepeer-review

93 Citations (Scopus)

Abstract

We present comprehensive measurements of the structural, magnetic, and electronic properties of layered van der Waals ferromagnet VI3 down to low temperatures. Despite belonging to a well-studied family of transition-metal trihalides, this material has received very little attention. We outline, from high-resolution powder x-ray diffraction measurements, a corrected room-temperature crystal structure to that previously proposed and uncover a structural transition at 79 K, also seen in the heat capacity. Magnetization measurements confirm VI3 to be a hard ferromagnet (9.1 kOe coercive field at 2 K) with a high degree of anisotropy, and the pressure dependence of the magnetic properties provide evidence for the two-dimensional nature of the magnetic order. Optical and electrical transport measurements show this material to be an insulator with an optical band gap of 0.67 eV - the previous theoretical predictions of d-band metallicity then lead us to believe VI3 to be a correlated Mott insulator. Our latest band-structure calculations support this picture and show good agreement with the experimental data. We suggest VI3 to host great potential in the thriving field of low-dimensional magnetism and functional materials, together with opportunities to study and make use of low-dimensional Mott physics.

Original languageEnglish
Article number041402
JournalPhysical Review B
Volume99
Issue number4
DOIs
Publication statusPublished - 2019 Jan 7

Bibliographical note

Publisher Copyright:
© 2019 American Physical Society.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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