Bulk and surface band structure of the new family of semiconductors BiTeX (X=I, Br, Cl)

L. Moreschini; G. Autès; A. Crepaldi; S. Moser; J. C. Johannsen; K. S. Kim; H. Berger; Ph Bugnon; A. Magrez; J. Denlinger; E. Rotenberg; A. Bostwick; O. V. Yazyev; M. Grioni

doi:10.1016/j.elspec.2014.11.004

Bulk and surface band structure of the new family of semiconductors BiTeX (X=I, Br, Cl)

L. Moreschini, G. Autès, A. Crepaldi, S. Moser, J. C. Johannsen, K. S. Kim, H. Berger, Ph Bugnon, A. Magrez, J. Denlinger, E. Rotenberg, A. Bostwick, O. V. Yazyev, M. Grioni

Department of Physics

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

We present an overview of the new family of semiconductors BiTeX (X = I, Br, Cl) from the perspective of angle resolved photoemission spectroscopy. The strong band bending occurring at the surface potentially endows them with a large flexibility, as they are capable of hosting both hole and electron conduction, and can be modified by inclusion or adsorption of foreign atoms. In addition, their trigonal crystal structure lacks a center of symmetry and allows for both bulk and surface spin-split bands at the Fermi level. We elucidate analogies and differences among the three materials, also in the light of recent theoretical and experimental work.

Original language	English
Pages (from-to)	115-120
Number of pages	6
Journal	Journal of Electron Spectroscopy and Related Phenomena
Volume	201
DOIs	https://doi.org/10.1016/j.elspec.2014.11.004
Publication status	Published - 2015 May 1

Bibliographical note

Funding Information:
We acknowledge support by the Swiss NSF , namely through grants No. PP00P2-133552 (G.A. and O.V.Y) and PA00P21-36420 (L.M.). We thank Yeongkwan Kim and Beomyoung Kim for technical support on Merlin. The Advanced Light Source is supported by the Director, Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231 . Electronic structure calculations have been performed at the Swiss National Supercomputing Centre (CSCS) under project s515.

Publisher Copyright:
©2014 Elsevier B.V. All rights reserved.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Radiation
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Spectroscopy
Physical and Theoretical Chemistry

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10.1016/j.elspec.2014.11.004

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Moreschini, L., Autès, G., Crepaldi, A., Moser, S., Johannsen, J. C., Kim, K. S., Berger, H., Bugnon, P., Magrez, A., Denlinger, J., Rotenberg, E., Bostwick, A., Yazyev, O. V., & Grioni, M. (2015). Bulk and surface band structure of the new family of semiconductors BiTeX (X=I, Br, Cl). Journal of Electron Spectroscopy and Related Phenomena, 201, 115-120. https://doi.org/10.1016/j.elspec.2014.11.004

@article{b1c904789627487a9d4f91e850b99048,

title = "Bulk and surface band structure of the new family of semiconductors BiTeX (X=I, Br, Cl)",

abstract = "We present an overview of the new family of semiconductors BiTeX (X = I, Br, Cl) from the perspective of angle resolved photoemission spectroscopy. The strong band bending occurring at the surface potentially endows them with a large flexibility, as they are capable of hosting both hole and electron conduction, and can be modified by inclusion or adsorption of foreign atoms. In addition, their trigonal crystal structure lacks a center of symmetry and allows for both bulk and surface spin-split bands at the Fermi level. We elucidate analogies and differences among the three materials, also in the light of recent theoretical and experimental work.",

author = "L. Moreschini and G. Aut{\`e}s and A. Crepaldi and S. Moser and Johannsen, {J. C.} and Kim, {K. S.} and H. Berger and Ph Bugnon and A. Magrez and J. Denlinger and E. Rotenberg and A. Bostwick and Yazyev, {O. V.} and M. Grioni",

note = "Funding Information: We acknowledge support by the Swiss NSF , namely through grants No. PP00P2-133552 (G.A. and O.V.Y) and PA00P21-36420 (L.M.). We thank Yeongkwan Kim and Beomyoung Kim for technical support on Merlin. The Advanced Light Source is supported by the Director, Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231 . Electronic structure calculations have been performed at the Swiss National Supercomputing Centre (CSCS) under project s515. Publisher Copyright: {\textcopyright}2014 Elsevier B.V. All rights reserved.",

year = "2015",

month = may,

day = "1",

doi = "10.1016/j.elspec.2014.11.004",

language = "English",

volume = "201",

pages = "115--120",

journal = "Journal of Electron Spectroscopy and Related Phenomena",

issn = "0368-2048",

publisher = "Elsevier",

}

Moreschini, L, Autès, G, Crepaldi, A, Moser, S, Johannsen, JC, Kim, KS, Berger, H, Bugnon, P, Magrez, A, Denlinger, J, Rotenberg, E, Bostwick, A, Yazyev, OV & Grioni, M 2015, 'Bulk and surface band structure of the new family of semiconductors BiTeX (X=I, Br, Cl)', Journal of Electron Spectroscopy and Related Phenomena, vol. 201, pp. 115-120. https://doi.org/10.1016/j.elspec.2014.11.004

TY - JOUR

T1 - Bulk and surface band structure of the new family of semiconductors BiTeX (X=I, Br, Cl)

AU - Moreschini, L.

AU - Autès, G.

AU - Crepaldi, A.

AU - Moser, S.

AU - Johannsen, J. C.

AU - Kim, K. S.

AU - Berger, H.

AU - Bugnon, Ph

AU - Magrez, A.

AU - Denlinger, J.

AU - Rotenberg, E.

AU - Bostwick, A.

AU - Yazyev, O. V.

AU - Grioni, M.

N1 - Funding Information: We acknowledge support by the Swiss NSF , namely through grants No. PP00P2-133552 (G.A. and O.V.Y) and PA00P21-36420 (L.M.). We thank Yeongkwan Kim and Beomyoung Kim for technical support on Merlin. The Advanced Light Source is supported by the Director, Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231 . Electronic structure calculations have been performed at the Swiss National Supercomputing Centre (CSCS) under project s515. Publisher Copyright: ©2014 Elsevier B.V. All rights reserved.

PY - 2015/5/1

Y1 - 2015/5/1

N2 - We present an overview of the new family of semiconductors BiTeX (X = I, Br, Cl) from the perspective of angle resolved photoemission spectroscopy. The strong band bending occurring at the surface potentially endows them with a large flexibility, as they are capable of hosting both hole and electron conduction, and can be modified by inclusion or adsorption of foreign atoms. In addition, their trigonal crystal structure lacks a center of symmetry and allows for both bulk and surface spin-split bands at the Fermi level. We elucidate analogies and differences among the three materials, also in the light of recent theoretical and experimental work.

AB - We present an overview of the new family of semiconductors BiTeX (X = I, Br, Cl) from the perspective of angle resolved photoemission spectroscopy. The strong band bending occurring at the surface potentially endows them with a large flexibility, as they are capable of hosting both hole and electron conduction, and can be modified by inclusion or adsorption of foreign atoms. In addition, their trigonal crystal structure lacks a center of symmetry and allows for both bulk and surface spin-split bands at the Fermi level. We elucidate analogies and differences among the three materials, also in the light of recent theoretical and experimental work.

UR - http://www.scopus.com/inward/record.url?scp=84929334197&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84929334197&partnerID=8YFLogxK

U2 - 10.1016/j.elspec.2014.11.004

DO - 10.1016/j.elspec.2014.11.004

M3 - Article

AN - SCOPUS:84929334197

SN - 0368-2048

VL - 201

SP - 115

EP - 120

JO - Journal of Electron Spectroscopy and Related Phenomena

JF - Journal of Electron Spectroscopy and Related Phenomena

ER -

Bulk and surface band structure of the new family of semiconductors BiTeX (X=I, Br, Cl)

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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