Buffer layer strain transfer in AlN/GaN near critical thickness

Chinkyo Kim, I. K. Robinson, Jaemin Myoung, Kyu Hwan Shim, Kyekyoon Kim

Research output: Contribution to journalArticlepeer-review

23 Citations (Scopus)


X-ray diffraction has been employed to investigate the strain relaxation of both components of a GaN/AlN bilayer on sapphire (0001) as a function of the GaN layer thickness. Below a critical thickness, GaN and AlN both relax with the same in-plane lattice constant, consistent with the energy minimum condition of elasticity theory for a bilayer. Above the critical thickness, however, the strain relaxations in the two layers were different. We can fit this strain relaxation behavior with a free standing bilayer model with an additional term describing the interaction of dislocations.

Original languageEnglish
Pages (from-to)4040-4044
Number of pages5
JournalJournal of Applied Physics
Issue number8
Publication statusPublished - 1999 Apr 15

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)


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