Buffer layer effect on the structural and electrical properties of rubrene-based organic thin-film transistors

J. H. Seo; D. S. Park; S. W. Cho; C. Y. Kim; W. C. Jang; C. N. Whang; K. H. Yoo; G. S. Chang; T. Pedersen; A. Moewes; K. H. Chae; S. J. Cho

doi:10.1063/1.2363940

Buffer layer effect on the structural and electrical properties of rubrene-based organic thin-film transistors

J. H. Seo, D. S. Park, S. W. Cho, C. Y. Kim, W. C. Jang, C. N. Whang, K. H. Yoo, G. S. Chang, T. Pedersen, A. Moewes, K. H. Chae, S. J. Cho

Research output: Contribution to journal › Article › peer-review

51 Citations (Scopus)

Abstract

The structural and electrical properties of organic thin-film transistors with rubrene/pentacene and pentacene/rubrene bilayered structures were investigated using x-ray diffraction, atomic force microscopy, and x-ray emission spectroscopy. High-quality rubrene thin films with orthorhombic structure were obtained in the rubrene/pentacene bilayer while the pentacene/rubrene bilayer only had an amorphous rubrene phase present. The rubrene/pentacene thin-film transistor shows more desirable current-voltage characteristics compared to the pentacene/rubrene transistor. The overall results suggest that the presence of a chemically active organic buffer layer and its associated crystal structure are crucial in enhancing the structural and electrical properties of rubrene-based transistors.

Original language	English
Article number	163505
Journal	Applied Physics Letters
Volume	89
Issue number	16
DOIs	https://doi.org/10.1063/1.2363940
Publication status	Published - 2006

Bibliographical note

Funding Information:
This work was supported by the Brain Korea 21 (BK21) project of the Korea Research Foundation (KRF) and the Korea Science and Engineering Foundation (KOSEF) through the National Core Research Center for Nanomedical Technology. The authors gratefully acknowledge the Natural Sciences and Engineering Research Council of Canada and the Canada Research Chair program.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2363940

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@article{2d22a564ca90415c869a013e59795fa3,

title = "Buffer layer effect on the structural and electrical properties of rubrene-based organic thin-film transistors",

abstract = "The structural and electrical properties of organic thin-film transistors with rubrene/pentacene and pentacene/rubrene bilayered structures were investigated using x-ray diffraction, atomic force microscopy, and x-ray emission spectroscopy. High-quality rubrene thin films with orthorhombic structure were obtained in the rubrene/pentacene bilayer while the pentacene/rubrene bilayer only had an amorphous rubrene phase present. The rubrene/pentacene thin-film transistor shows more desirable current-voltage characteristics compared to the pentacene/rubrene transistor. The overall results suggest that the presence of a chemically active organic buffer layer and its associated crystal structure are crucial in enhancing the structural and electrical properties of rubrene-based transistors.",

author = "Seo, {J. H.} and Park, {D. S.} and Cho, {S. W.} and Kim, {C. Y.} and Jang, {W. C.} and Whang, {C. N.} and Yoo, {K. H.} and Chang, {G. S.} and T. Pedersen and A. Moewes and Chae, {K. H.} and Cho, {S. J.}",

note = "Funding Information: This work was supported by the Brain Korea 21 (BK21) project of the Korea Research Foundation (KRF) and the Korea Science and Engineering Foundation (KOSEF) through the National Core Research Center for Nanomedical Technology. The authors gratefully acknowledge the Natural Sciences and Engineering Research Council of Canada and the Canada Research Chair program.",

year = "2006",

doi = "10.1063/1.2363940",

language = "English",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "16",

}

TY - JOUR

T1 - Buffer layer effect on the structural and electrical properties of rubrene-based organic thin-film transistors

AU - Seo, J. H.

AU - Park, D. S.

AU - Cho, S. W.

AU - Kim, C. Y.

AU - Jang, W. C.

AU - Whang, C. N.

AU - Yoo, K. H.

AU - Chang, G. S.

AU - Pedersen, T.

AU - Moewes, A.

AU - Chae, K. H.

AU - Cho, S. J.

N1 - Funding Information: This work was supported by the Brain Korea 21 (BK21) project of the Korea Research Foundation (KRF) and the Korea Science and Engineering Foundation (KOSEF) through the National Core Research Center for Nanomedical Technology. The authors gratefully acknowledge the Natural Sciences and Engineering Research Council of Canada and the Canada Research Chair program.

PY - 2006

Y1 - 2006

N2 - The structural and electrical properties of organic thin-film transistors with rubrene/pentacene and pentacene/rubrene bilayered structures were investigated using x-ray diffraction, atomic force microscopy, and x-ray emission spectroscopy. High-quality rubrene thin films with orthorhombic structure were obtained in the rubrene/pentacene bilayer while the pentacene/rubrene bilayer only had an amorphous rubrene phase present. The rubrene/pentacene thin-film transistor shows more desirable current-voltage characteristics compared to the pentacene/rubrene transistor. The overall results suggest that the presence of a chemically active organic buffer layer and its associated crystal structure are crucial in enhancing the structural and electrical properties of rubrene-based transistors.

AB - The structural and electrical properties of organic thin-film transistors with rubrene/pentacene and pentacene/rubrene bilayered structures were investigated using x-ray diffraction, atomic force microscopy, and x-ray emission spectroscopy. High-quality rubrene thin films with orthorhombic structure were obtained in the rubrene/pentacene bilayer while the pentacene/rubrene bilayer only had an amorphous rubrene phase present. The rubrene/pentacene thin-film transistor shows more desirable current-voltage characteristics compared to the pentacene/rubrene transistor. The overall results suggest that the presence of a chemically active organic buffer layer and its associated crystal structure are crucial in enhancing the structural and electrical properties of rubrene-based transistors.

UR - http://www.scopus.com/inward/record.url?scp=33750162037&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33750162037&partnerID=8YFLogxK

U2 - 10.1063/1.2363940

DO - 10.1063/1.2363940

M3 - Article

AN - SCOPUS:33750162037

SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

M1 - 163505

ER -

Buffer layer effect on the structural and electrical properties of rubrene-based organic thin-film transistors

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