Buffer layer effect on the structural and electrical properties of rubrene-based organic thin-film transistors

J. H. Seo, D. S. Park, S. W. Cho, C. Y. Kim, W. C. Jang, C. N. Whang, K. H. Yoo, G. S. Chang, T. Pedersen, A. Moewes, K. H. Chae, S. J. Cho

Research output: Contribution to journalArticlepeer-review

51 Citations (Scopus)


The structural and electrical properties of organic thin-film transistors with rubrene/pentacene and pentacene/rubrene bilayered structures were investigated using x-ray diffraction, atomic force microscopy, and x-ray emission spectroscopy. High-quality rubrene thin films with orthorhombic structure were obtained in the rubrene/pentacene bilayer while the pentacene/rubrene bilayer only had an amorphous rubrene phase present. The rubrene/pentacene thin-film transistor shows more desirable current-voltage characteristics compared to the pentacene/rubrene transistor. The overall results suggest that the presence of a chemically active organic buffer layer and its associated crystal structure are crucial in enhancing the structural and electrical properties of rubrene-based transistors.

Original languageEnglish
Article number163505
JournalApplied Physics Letters
Issue number16
Publication statusPublished - 2006

Bibliographical note

Funding Information:
This work was supported by the Brain Korea 21 (BK21) project of the Korea Research Foundation (KRF) and the Korea Science and Engineering Foundation (KOSEF) through the National Core Research Center for Nanomedical Technology. The authors gratefully acknowledge the Natural Sciences and Engineering Research Council of Canada and the Canada Research Chair program.

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'Buffer layer effect on the structural and electrical properties of rubrene-based organic thin-film transistors'. Together they form a unique fingerprint.

Cite this