Bottom-metal induced leakage current of LTPS diode for ESD protection

H. W. Hwang; K. W. Kim; Y. M. Ha; H. J. Kim

doi:10.1149/08611.0189ecst

Bottom-metal induced leakage current of LTPS diode for ESD protection

H. W. Hwang, K. W. Kim, Y. M. Ha, H. J. Kim

Department of Electrical and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Leakage current behavior was investigated for diode-connected low temperature polycrystalline silicon (LTPS) thin film transistors (TFTs) with the coplanar structure for electrostatic discharge (ESD) protection in display product with high luminance backlight system. In this study, the bottom metal (BM) layer was adopted to block lights coming from backlight system. We observed different leakage current behaviors as each other electrical connection of BM layer, such as floating BM (FBM), source-contacted BM (SBM), and gate-contacted BM (GBM). In particular, when negative voltage is applied, LTPS diodes with SBM and FBM show the high leakage current by increasing current flow through back-channel. On the other hand, GBM has comparable low leakage current with non-BM. These leakage current characteristics were verified by technology computer-aided design (TCAD) simulation.

Original language	English
Title of host publication	ECS Transactions
Editors	Yue Kuo
Publisher	Electrochemical Society Inc.
Pages	189-192
Number of pages	4
Edition	11
ISBN (Electronic)	9781510871717, 9781607688570
DOIs	https://doi.org/10.1149/08611.0189ecst
Publication status	Published - 2018
Event	Symposium on Thin Film Transistor Technologies 14, TFTT 2018 - AiMES 2018, ECS and SMEQ Joint International Meeting - Cancun, Mexico Duration: 2018 Sept 30 → 2018 Oct 4

Publication series

Name	ECS Transactions
Number	11
Volume	86
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Conference

Conference	Symposium on Thin Film Transistor Technologies 14, TFTT 2018 - AiMES 2018, ECS and SMEQ Joint International Meeting
Country/Territory	Mexico
City	Cancun
Period	18/9/30 → 18/10/4

Bibliographical note

Publisher Copyright:
© 2018 Electrochemical Society Inc.All rights reserved.

All Science Journal Classification (ASJC) codes

General Engineering

Access to Document

10.1149/08611.0189ecst

Cite this

@inproceedings{4a753de29f514f438433cb8ae58e43cf,

title = "Bottom-metal induced leakage current of LTPS diode for ESD protection",

abstract = "Leakage current behavior was investigated for diode-connected low temperature polycrystalline silicon (LTPS) thin film transistors (TFTs) with the coplanar structure for electrostatic discharge (ESD) protection in display product with high luminance backlight system. In this study, the bottom metal (BM) layer was adopted to block lights coming from backlight system. We observed different leakage current behaviors as each other electrical connection of BM layer, such as floating BM (FBM), source-contacted BM (SBM), and gate-contacted BM (GBM). In particular, when negative voltage is applied, LTPS diodes with SBM and FBM show the high leakage current by increasing current flow through back-channel. On the other hand, GBM has comparable low leakage current with non-BM. These leakage current characteristics were verified by technology computer-aided design (TCAD) simulation.",

author = "Hwang, {H. W.} and Kim, {K. W.} and Ha, {Y. M.} and Kim, {H. J.}",

note = "Publisher Copyright: {\textcopyright} 2018 Electrochemical Society Inc.All rights reserved.; Symposium on Thin Film Transistor Technologies 14, TFTT 2018 - AiMES 2018, ECS and SMEQ Joint International Meeting ; Conference date: 30-09-2018 Through 04-10-2018",

year = "2018",

doi = "10.1149/08611.0189ecst",

language = "English",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "11",

pages = "189--192",

editor = "Yue Kuo",

booktitle = "ECS Transactions",

edition = "11",

}

Hwang, HW, Kim, KW, Ha, YM & Kim, HJ 2018, Bottom-metal induced leakage current of LTPS diode for ESD protection. in Y Kuo (ed.), ECS Transactions. 11 edn, ECS Transactions, no. 11, vol. 86, Electrochemical Society Inc., pp. 189-192, Symposium on Thin Film Transistor Technologies 14, TFTT 2018 - AiMES 2018, ECS and SMEQ Joint International Meeting, Cancun, Mexico, 18/9/30. https://doi.org/10.1149/08611.0189ecst

TY - GEN

T1 - Bottom-metal induced leakage current of LTPS diode for ESD protection

AU - Hwang, H. W.

AU - Kim, K. W.

AU - Ha, Y. M.

AU - Kim, H. J.

PY - 2018

Y1 - 2018

N2 - Leakage current behavior was investigated for diode-connected low temperature polycrystalline silicon (LTPS) thin film transistors (TFTs) with the coplanar structure for electrostatic discharge (ESD) protection in display product with high luminance backlight system. In this study, the bottom metal (BM) layer was adopted to block lights coming from backlight system. We observed different leakage current behaviors as each other electrical connection of BM layer, such as floating BM (FBM), source-contacted BM (SBM), and gate-contacted BM (GBM). In particular, when negative voltage is applied, LTPS diodes with SBM and FBM show the high leakage current by increasing current flow through back-channel. On the other hand, GBM has comparable low leakage current with non-BM. These leakage current characteristics were verified by technology computer-aided design (TCAD) simulation.

AB - Leakage current behavior was investigated for diode-connected low temperature polycrystalline silicon (LTPS) thin film transistors (TFTs) with the coplanar structure for electrostatic discharge (ESD) protection in display product with high luminance backlight system. In this study, the bottom metal (BM) layer was adopted to block lights coming from backlight system. We observed different leakage current behaviors as each other electrical connection of BM layer, such as floating BM (FBM), source-contacted BM (SBM), and gate-contacted BM (GBM). In particular, when negative voltage is applied, LTPS diodes with SBM and FBM show the high leakage current by increasing current flow through back-channel. On the other hand, GBM has comparable low leakage current with non-BM. These leakage current characteristics were verified by technology computer-aided design (TCAD) simulation.

UR - http://www.scopus.com/inward/record.url?scp=85058267608&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85058267608&partnerID=8YFLogxK

U2 - 10.1149/08611.0189ecst

DO - 10.1149/08611.0189ecst

M3 - Conference contribution

AN - SCOPUS:85058267608

T3 - ECS Transactions

SP - 189

EP - 192

BT - ECS Transactions

A2 - Kuo, Yue

PB - Electrochemical Society Inc.

T2 - Symposium on Thin Film Transistor Technologies 14, TFTT 2018 - AiMES 2018, ECS and SMEQ Joint International Meeting

Y2 - 30 September 2018 through 4 October 2018

ER -

Bottom-metal induced leakage current of LTPS diode for ESD protection

Abstract

Publication series

Conference

Bibliographical note

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this