Bottom-gate gallium indium zinc oxide thin-film transistor array for high-resolution AMOLED display

Jang Yeon Kwon; Kyoung Seok Son; Ji Sim Jung; Tae Sang Kim; Myung Kwan Ryu; Kyung Bae Park; Byung Wook Yoo; Jung Woo Kim; Young Gu Lee; Kee Chan Park; Sang Yoon Lee; Jong Min Kim

doi:10.1109/LED.2008.2006637

Bottom-gate gallium indium zinc oxide thin-film transistor array for high-resolution AMOLED display

Jang Yeon Kwon, Kyoung Seok Son, Ji Sim Jung, Tae Sang Kim, Myung Kwan Ryu, Kyung Bae Park, Byung Wook Yoo, Jung Woo Kim, Young Gu Lee, Kee Chan Park, Sang Yoon Lee, Jong Min Kim

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

275 Citations (Scopus)

Abstract

The fabrication process and the characteristics of bottom-gate Ga₂O₃-In₂O₃-ZnO (GIZO) thin-film transistors (TFTs) are reported in detail. Experimental results show that oxygen supply during the deposition of GIZO active layer and silicon oxide passivation layer controls the threshold voltage of the TFT. The field-effect mobility and the threshold voltage of the GIZO TFT fabricated under the optimum process conditions are 2.6 cm²/V · s and 3.8 V, respectively. A 4-in QVGA active-matrix organic light-emitting diode display driven by the GIZO TFTs without any compensation circuit in the pixel is successfully demonstrated.

Original language	English
Pages (from-to)	1309-1311
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	29
Issue number	12
DOIs	https://doi.org/10.1109/LED.2008.2006637
Publication status	Published - 2008

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2008.2006637

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title = "Bottom-gate gallium indium zinc oxide thin-film transistor array for high-resolution AMOLED display",

abstract = "The fabrication process and the characteristics of bottom-gate Ga2O3-In2O3-ZnO (GIZO) thin-film transistors (TFTs) are reported in detail. Experimental results show that oxygen supply during the deposition of GIZO active layer and silicon oxide passivation layer controls the threshold voltage of the TFT. The field-effect mobility and the threshold voltage of the GIZO TFT fabricated under the optimum process conditions are 2.6 cm2/V · s and 3.8 V, respectively. A 4-in QVGA active-matrix organic light-emitting diode display driven by the GIZO TFTs without any compensation circuit in the pixel is successfully demonstrated.",

author = "Kwon, {Jang Yeon} and Son, {Kyoung Seok} and Jung, {Ji Sim} and Kim, {Tae Sang} and Ryu, {Myung Kwan} and Park, {Kyung Bae} and Yoo, {Byung Wook} and Kim, {Jung Woo} and Lee, {Young Gu} and Park, {Kee Chan} and Lee, {Sang Yoon} and Kim, {Jong Min}",

year = "2008",

doi = "10.1109/LED.2008.2006637",

language = "English",

volume = "29",

pages = "1309--1311",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Bottom-gate gallium indium zinc oxide thin-film transistor array for high-resolution AMOLED display

AU - Kwon, Jang Yeon

AU - Son, Kyoung Seok

AU - Jung, Ji Sim

AU - Kim, Tae Sang

AU - Ryu, Myung Kwan

AU - Park, Kyung Bae

AU - Yoo, Byung Wook

AU - Kim, Jung Woo

AU - Lee, Young Gu

AU - Park, Kee Chan

AU - Lee, Sang Yoon

AU - Kim, Jong Min

PY - 2008

Y1 - 2008

N2 - The fabrication process and the characteristics of bottom-gate Ga2O3-In2O3-ZnO (GIZO) thin-film transistors (TFTs) are reported in detail. Experimental results show that oxygen supply during the deposition of GIZO active layer and silicon oxide passivation layer controls the threshold voltage of the TFT. The field-effect mobility and the threshold voltage of the GIZO TFT fabricated under the optimum process conditions are 2.6 cm2/V · s and 3.8 V, respectively. A 4-in QVGA active-matrix organic light-emitting diode display driven by the GIZO TFTs without any compensation circuit in the pixel is successfully demonstrated.

AB - The fabrication process and the characteristics of bottom-gate Ga2O3-In2O3-ZnO (GIZO) thin-film transistors (TFTs) are reported in detail. Experimental results show that oxygen supply during the deposition of GIZO active layer and silicon oxide passivation layer controls the threshold voltage of the TFT. The field-effect mobility and the threshold voltage of the GIZO TFT fabricated under the optimum process conditions are 2.6 cm2/V · s and 3.8 V, respectively. A 4-in QVGA active-matrix organic light-emitting diode display driven by the GIZO TFTs without any compensation circuit in the pixel is successfully demonstrated.

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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Bottom-gate gallium indium zinc oxide thin-film transistor array for high-resolution AMOLED display

Abstract

All Science Journal Classification (ASJC) codes

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