Boron pile-up at the interface between plasma enhanced chemical vapor deposited TiSi2 film and BF2-doped Si

Yoon Jik Lee; Hyun Chul Sohn; Sung Woong Chung

doi:10.1063/1.1594287

Boron pile-up at the interface between plasma enhanced chemical vapor deposited TiSi₂ film and BF₂-doped Si

Yoon Jik Lee, Hyun Chul Sohn, Sung Woong Chung

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The redistribution of boron in BF₂-doped Si substrate during plasma enhanced chemical vapor deposition (PECVD) of TiSi₂ was investigated with secondary ion mass spectrometry. Boron concentration increased at the TiSi₂/Si interface after deposition of PECVD TiSi₂. It was found that the contact resistance with PECVD TiSi ₂ was constant in the range of -30-125°C.

Original language	English
Pages (from-to)	494-496
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	3
DOIs	https://doi.org/10.1063/1.1594287
Publication status	Published - 2003 Jul 21

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1594287

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title = "Boron pile-up at the interface between plasma enhanced chemical vapor deposited TiSi2 film and BF2-doped Si",

abstract = "The redistribution of boron in BF2-doped Si substrate during plasma enhanced chemical vapor deposition (PECVD) of TiSi2 was investigated with secondary ion mass spectrometry. Boron concentration increased at the TiSi2/Si interface after deposition of PECVD TiSi2. It was found that the contact resistance with PECVD TiSi 2 was constant in the range of -30-125°C.",

author = "Lee, {Yoon Jik} and Sohn, {Hyun Chul} and Chung, {Sung Woong}",

year = "2003",

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AU - Lee, Yoon Jik

AU - Sohn, Hyun Chul

AU - Chung, Sung Woong

PY - 2003/7/21

Y1 - 2003/7/21

N2 - The redistribution of boron in BF2-doped Si substrate during plasma enhanced chemical vapor deposition (PECVD) of TiSi2 was investigated with secondary ion mass spectrometry. Boron concentration increased at the TiSi2/Si interface after deposition of PECVD TiSi2. It was found that the contact resistance with PECVD TiSi 2 was constant in the range of -30-125°C.

AB - The redistribution of boron in BF2-doped Si substrate during plasma enhanced chemical vapor deposition (PECVD) of TiSi2 was investigated with secondary ion mass spectrometry. Boron concentration increased at the TiSi2/Si interface after deposition of PECVD TiSi2. It was found that the contact resistance with PECVD TiSi 2 was constant in the range of -30-125°C.

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Boron pile-up at the interface between plasma enhanced chemical vapor deposited TiSi₂ film and BF₂-doped Si

Abstract

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