The redistribution of boron in BF2-doped Si substrate during plasma enhanced chemical vapor deposition (PECVD) of TiSi2 was investigated with secondary ion mass spectrometry. Boron concentration increased at the TiSi2/Si interface after deposition of PECVD TiSi2. It was found that the contact resistance with PECVD TiSi 2 was constant in the range of -30-125°C.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 2003 Jul 21|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)