Abstract
We suggest boron (B) and aluminum (Al) codoped ZnO (BAZO) transparent conducting thin films with high electrical stability for photovoltaic applications. The resistivity of widely used Al-doped ZnO (AZO) film decreased slightly by B doping. Above all, the resistivity of BAZO (4.9 at. % boron) increased by less than 1.5 times, whereas that of reference AZO film increased by over than 8 times after thermal annealing in atmospheric air. The carrier concentration and Hall mobility were much less degraded in BAZO films. X-ray photoelectron spectroscopy analysis showed that the peak portion related with chemisorbed oxygen at 100 nm-inside of the film was suppressed in BAZO film compared with AZO film. The B atoms would restrain the oxygen permeation into the film, which made the process of oxygen chemisorption inactive.
| Original language | English |
|---|---|
| Pages (from-to) | H61-H65 |
| Journal | Journal of the Electrochemical Society |
| Volume | 159 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2012 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Electrochemistry
- Materials Chemistry
