Boosting Visible Light Absorption of Metal-Oxide-Based Phototransistors via Heterogeneous In-Ga-Zn-O and CH₃NH₃PbI₃ Films

Engineering

• Plasma Damage 100%
• Light Absorption 66%
• Absorption Layer 66%
• Applications 66%
• Based Optoelectronic Device 66%
• Passivation Layer 33%
• Reliability 33%
• Channel Layer 33%
• Photocurrent 33%
• External Quantum Efficiency 33%
• Water 33%

Physics

• Electromagnetic Absorption 66%
• Visible Spectrum 66%
• Utilization 66%
• Silica 33%
• Silicon Dioxide 33%
• Photoelectric Emission 33%
• Amplifier 33%
• Reliability 33%
• Deposition 33%
• Water 33%
• Act 33%
• Lead 33%

Chemistry

• Metal Oxide 100%
• Application 66%
• Illumination 33%
• Photocurrent 33%
• Iodide 33%
• Methylammonium 33%
• Silicon Dioxide 33%
• Photosensitivity 33%
• Structure 33%
• Water Type 33%