Boost up mobility of solution-processed metal oxide thin-film transistors via confining structure on electron pathways

You Seung Rim; Huajun Chen; Xiaolu Kou; Hsin Sheng Duan; Huanping Zhou; Min Cai; Hyun Jae Kim; Yang Yang

doi:10.1002/adma.201400529

Boost up mobility of solution-processed metal oxide thin-film transistors via confining structure on electron pathways

You Seung Rim, Huajun Chen, Xiaolu Kou, Hsin Sheng Duan, Huanping Zhou, Min Cai, Hyun Jae Kim, Yang Yang

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

167 Citations (Scopus)

Abstract

Novel structure-engineered amorphous oxide semiconductor thin-film transistors using a solution process to overcome the trade-off between high mobility and other parameters (i.e., on/off ratio, sub-threshold voltage swing, threshold voltage, and so on) are proposed. High performance confining structure-engineered AOS TFTs are successfully demonstrated, which utilize a specially designed layer with ultra-high density and high electron mobility.

Original language	English
Pages (from-to)	4273-4278
Number of pages	6
Journal	Advanced Materials
Volume	26
Issue number	25
DOIs	https://doi.org/10.1002/adma.201400529
Publication status	Published - 2014 Jul

All Science Journal Classification (ASJC) codes

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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10.1002/adma.201400529

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title = "Boost up mobility of solution-processed metal oxide thin-film transistors via confining structure on electron pathways",

abstract = "Novel structure-engineered amorphous oxide semiconductor thin-film transistors using a solution process to overcome the trade-off between high mobility and other parameters (i.e., on/off ratio, sub-threshold voltage swing, threshold voltage, and so on) are proposed. High performance confining structure-engineered AOS TFTs are successfully demonstrated, which utilize a specially designed layer with ultra-high density and high electron mobility.",

author = "Rim, {You Seung} and Huajun Chen and Xiaolu Kou and Duan, {Hsin Sheng} and Huanping Zhou and Min Cai and Kim, {Hyun Jae} and Yang Yang",

year = "2014",

month = jul,

doi = "10.1002/adma.201400529",

language = "English",

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pages = "4273--4278",

journal = "Advanced Materials",

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T1 - Boost up mobility of solution-processed metal oxide thin-film transistors via confining structure on electron pathways

AU - Rim, You Seung

AU - Chen, Huajun

AU - Kou, Xiaolu

AU - Duan, Hsin Sheng

AU - Zhou, Huanping

AU - Cai, Min

AU - Kim, Hyun Jae

AU - Yang, Yang

PY - 2014/7

Y1 - 2014/7

N2 - Novel structure-engineered amorphous oxide semiconductor thin-film transistors using a solution process to overcome the trade-off between high mobility and other parameters (i.e., on/off ratio, sub-threshold voltage swing, threshold voltage, and so on) are proposed. High performance confining structure-engineered AOS TFTs are successfully demonstrated, which utilize a specially designed layer with ultra-high density and high electron mobility.

AB - Novel structure-engineered amorphous oxide semiconductor thin-film transistors using a solution process to overcome the trade-off between high mobility and other parameters (i.e., on/off ratio, sub-threshold voltage swing, threshold voltage, and so on) are proposed. High performance confining structure-engineered AOS TFTs are successfully demonstrated, which utilize a specially designed layer with ultra-high density and high electron mobility.

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DO - 10.1002/adma.201400529

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JO - Advanced Materials

JF - Advanced Materials

IS - 25

ER -

Boost up mobility of solution-processed metal oxide thin-film transistors via confining structure on electron pathways

Abstract

All Science Journal Classification (ASJC) codes

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