Blue and red luminescence from Si ion-irradiated SiO2/Si/SiO2 layers

J. H. Son; T. G. Kim; S. W. Shin; H. B. Kim; W. S. Lee; S. Im; J. H. Song; C. N. Whang; K. H. Chae

doi:10.1016/S0925-3467(01)00034-9

Blue and red luminescence from Si ion-irradiated SiO₂/Si/SiO₂ layers

J. H. Son, T. G. Kim, S. W. Shin, H. B. Kim, W. S. Lee, S. Im, J. H. Song, C. N. Whang, K. H. Chae

Department of Physics

Research output: Contribution to journal › Conference article › peer-review

10 Citations (Scopus)

Abstract

Photoluminescence (PL) from the Si ion-irradiated SiO₂/Si/SiO₂ layers on Si substrate at room temperature has been studied to elucidate the origins of the blue and red luminescence. A luminescence band around 450 nm was observed from as-irradiated sample, which was found to be originated from the diamagnetic defect known as B₂ band generated by Si ion irradiation. The intensity of this band increases with the increase of annealing temperatures up to a critical temperature. After annealing at 1100°C, the defect-related PL peaks around 450 and 600 nm disappear and a new PL peak appears around 700 nm. This luminescence band is attributed to ∼5 nm-sized Si nanocrystals formed along the Si layer between SiO₂ layers.

Original language	English
Pages (from-to)	125-129
Number of pages	5
Journal	Optical Materials
Volume	17
Issue number	1-2
DOIs	https://doi.org/10.1016/S0925-3467(01)00034-9
Publication status	Published - 2001 Jun
Event	Optoelectronics I: Materials and Technologies for Optoelectronic Devices - Strasbourg, France Duration: 2000 May 30 → 2000 Jun 2

Bibliographical note

Funding Information:
This work was supported in part by the KOSEF through the ASSRC at Yonsei University, the grants from KOSEF (1999-2-114-004-5), and the Pusan branch of Korea Basic Science Institute (KBSI).

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Computer Science(all)
Atomic and Molecular Physics, and Optics
Spectroscopy
Physical and Theoretical Chemistry
Organic Chemistry
Inorganic Chemistry
Electrical and Electronic Engineering

Access to Document

10.1016/S0925-3467(01)00034-9

Cite this

@article{042189fa6b904014979e2f9edba5d011,

title = "Blue and red luminescence from Si ion-irradiated SiO2/Si/SiO2 layers",

abstract = "Photoluminescence (PL) from the Si ion-irradiated SiO2/Si/SiO2 layers on Si substrate at room temperature has been studied to elucidate the origins of the blue and red luminescence. A luminescence band around 450 nm was observed from as-irradiated sample, which was found to be originated from the diamagnetic defect known as B2 band generated by Si ion irradiation. The intensity of this band increases with the increase of annealing temperatures up to a critical temperature. After annealing at 1100°C, the defect-related PL peaks around 450 and 600 nm disappear and a new PL peak appears around 700 nm. This luminescence band is attributed to ∼5 nm-sized Si nanocrystals formed along the Si layer between SiO2 layers.",

author = "Son, {J. H.} and Kim, {T. G.} and Shin, {S. W.} and Kim, {H. B.} and Lee, {W. S.} and S. Im and Song, {J. H.} and Whang, {C. N.} and Chae, {K. H.}",

note = "Funding Information: This work was supported in part by the KOSEF through the ASSRC at Yonsei University, the grants from KOSEF (1999-2-114-004-5), and the Pusan branch of Korea Basic Science Institute (KBSI). ; Optoelectronics I: Materials and Technologies for Optoelectronic Devices ; Conference date: 30-05-2000 Through 02-06-2000",

year = "2001",

month = jun,

doi = "10.1016/S0925-3467(01)00034-9",

language = "English",

volume = "17",

pages = "125--129",

journal = "Optical Materials",

issn = "0925-3467",

publisher = "Elsevier",

number = "1-2",

}

TY - JOUR

T1 - Blue and red luminescence from Si ion-irradiated SiO2/Si/SiO2 layers

AU - Son, J. H.

AU - Kim, T. G.

AU - Shin, S. W.

AU - Kim, H. B.

AU - Lee, W. S.

AU - Im, S.

AU - Song, J. H.

AU - Whang, C. N.

AU - Chae, K. H.

N1 - Funding Information: This work was supported in part by the KOSEF through the ASSRC at Yonsei University, the grants from KOSEF (1999-2-114-004-5), and the Pusan branch of Korea Basic Science Institute (KBSI).

PY - 2001/6

Y1 - 2001/6

N2 - Photoluminescence (PL) from the Si ion-irradiated SiO2/Si/SiO2 layers on Si substrate at room temperature has been studied to elucidate the origins of the blue and red luminescence. A luminescence band around 450 nm was observed from as-irradiated sample, which was found to be originated from the diamagnetic defect known as B2 band generated by Si ion irradiation. The intensity of this band increases with the increase of annealing temperatures up to a critical temperature. After annealing at 1100°C, the defect-related PL peaks around 450 and 600 nm disappear and a new PL peak appears around 700 nm. This luminescence band is attributed to ∼5 nm-sized Si nanocrystals formed along the Si layer between SiO2 layers.

AB - Photoluminescence (PL) from the Si ion-irradiated SiO2/Si/SiO2 layers on Si substrate at room temperature has been studied to elucidate the origins of the blue and red luminescence. A luminescence band around 450 nm was observed from as-irradiated sample, which was found to be originated from the diamagnetic defect known as B2 band generated by Si ion irradiation. The intensity of this band increases with the increase of annealing temperatures up to a critical temperature. After annealing at 1100°C, the defect-related PL peaks around 450 and 600 nm disappear and a new PL peak appears around 700 nm. This luminescence band is attributed to ∼5 nm-sized Si nanocrystals formed along the Si layer between SiO2 layers.

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U2 - 10.1016/S0925-3467(01)00034-9

DO - 10.1016/S0925-3467(01)00034-9

M3 - Conference article

AN - SCOPUS:0035361764

SN - 0925-3467

VL - 17

SP - 125

EP - 129

JO - Optical Materials

JF - Optical Materials

IS - 1-2

T2 - Optoelectronics I: Materials and Technologies for Optoelectronic Devices

Y2 - 30 May 2000 through 2 June 2000

ER -