Black phosphorus nonvolatile transistor memory

Dain Lee, Yongsuk Choi, Euyheon Hwang, Moon Sung Kang, Seungwoo Lee, Jeong Ho Cho

Research output: Contribution to journalArticlepeer-review

40 Citations (Scopus)


We demonstrated nanofloating gate transistor memory devices (NFGTMs) using mechanically-exfoliated few-layered black phosphorus (BP) channels and gold nanoparticle (AuNPs) charge trapping layers. The resulting BP-NFGTMs exhibited excellent memory performances, including the five-level data storage, large memory window (58.2 V), stable retention (104 s), and cyclic endurance (1000 cycles).

Original languageEnglish
Pages (from-to)9107-9112
Number of pages6
Issue number17
Publication statusPublished - 2016 May 7

Bibliographical note

Publisher Copyright:
© 2016 The Royal Society of Chemistry.

All Science Journal Classification (ASJC) codes

  • General Materials Science


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