Bi3.25La0.75Ti3O12 (BLT) nanotube capacitors for semiconductor memories

B. I. Seo; U. A. Shaislamov; S. W. Kim; H. K. Kim; B. Yang; S. K. Hong

doi:10.1016/j.physe.2006.09.003

Bi_3.25La_0.75Ti₃O₁₂ (BLT) nanotube capacitors for semiconductor memories

B. I. Seo, U. A. Shaislamov, S. W. Kim, H. K. Kim, B. Yang, S. K. Hong

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

We report results of fabrication and examination of Bi_3.25La_0.75Ti₃O₁₂ (BLT) ferroelectric nanotubes. BLT nanotubes are suggested for developing 3D ferroelectric nanotube capacitors which could be used in high-density memory applications. BLT nanotubes were prepared by template-wetting process using polymeric sources where anodic aluminum oxide had been used as a template. After annealing, tubular BLT structures were crystallized inside the pores of the template. By selective etching of the template, released BLT nanotubes have been obtained. Crystallization and nucleation of the nanotubes were analyzed by XRD and FE-SEM techniques.

Original language	English
Pages (from-to)	274-278
Number of pages	5
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	37
Issue number	1-2
DOIs	https://doi.org/10.1016/j.physe.2006.09.003
Publication status	Published - 2007 Mar

Bibliographical note

Funding Information:
This work was supported by the Ministry of Commerce, Industry and Energy in Korea under the System IC 2010 Project.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

Access to Document

10.1016/j.physe.2006.09.003

Cite this

@article{1ac52d5f01b54e1db26bf65c4b6eadbf,

title = "Bi3.25La0.75Ti3O12 (BLT) nanotube capacitors for semiconductor memories",

abstract = "We report results of fabrication and examination of Bi3.25La0.75Ti3O12 (BLT) ferroelectric nanotubes. BLT nanotubes are suggested for developing 3D ferroelectric nanotube capacitors which could be used in high-density memory applications. BLT nanotubes were prepared by template-wetting process using polymeric sources where anodic aluminum oxide had been used as a template. After annealing, tubular BLT structures were crystallized inside the pores of the template. By selective etching of the template, released BLT nanotubes have been obtained. Crystallization and nucleation of the nanotubes were analyzed by XRD and FE-SEM techniques.",

author = "Seo, {B. I.} and Shaislamov, {U. A.} and Kim, {S. W.} and Kim, {H. K.} and B. Yang and Hong, {S. K.}",

note = "Funding Information: This work was supported by the Ministry of Commerce, Industry and Energy in Korea under the System IC 2010 Project.",

year = "2007",

month = mar,

doi = "10.1016/j.physe.2006.09.003",

language = "English",

volume = "37",

pages = "274--278",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier",

number = "1-2",

}

TY - JOUR

T1 - Bi3.25La0.75Ti3O12 (BLT) nanotube capacitors for semiconductor memories

AU - Seo, B. I.

AU - Shaislamov, U. A.

AU - Kim, S. W.

AU - Kim, H. K.

AU - Yang, B.

AU - Hong, S. K.

N1 - Funding Information: This work was supported by the Ministry of Commerce, Industry and Energy in Korea under the System IC 2010 Project.

PY - 2007/3

Y1 - 2007/3

N2 - We report results of fabrication and examination of Bi3.25La0.75Ti3O12 (BLT) ferroelectric nanotubes. BLT nanotubes are suggested for developing 3D ferroelectric nanotube capacitors which could be used in high-density memory applications. BLT nanotubes were prepared by template-wetting process using polymeric sources where anodic aluminum oxide had been used as a template. After annealing, tubular BLT structures were crystallized inside the pores of the template. By selective etching of the template, released BLT nanotubes have been obtained. Crystallization and nucleation of the nanotubes were analyzed by XRD and FE-SEM techniques.

AB - We report results of fabrication and examination of Bi3.25La0.75Ti3O12 (BLT) ferroelectric nanotubes. BLT nanotubes are suggested for developing 3D ferroelectric nanotube capacitors which could be used in high-density memory applications. BLT nanotubes were prepared by template-wetting process using polymeric sources where anodic aluminum oxide had been used as a template. After annealing, tubular BLT structures were crystallized inside the pores of the template. By selective etching of the template, released BLT nanotubes have been obtained. Crystallization and nucleation of the nanotubes were analyzed by XRD and FE-SEM techniques.

UR - http://www.scopus.com/inward/record.url?scp=33947156700&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33947156700&partnerID=8YFLogxK

U2 - 10.1016/j.physe.2006.09.003

DO - 10.1016/j.physe.2006.09.003

M3 - Article

AN - SCOPUS:33947156700

SN - 1386-9477

VL - 37

SP - 274

EP - 278

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 1-2

ER -