Bi3.25La0.75Ti3O12 (BLT) nanotube capacitors for semiconductor memories

B. I. Seo, U. A. Shaislamov, S. W. Kim, H. K. Kim, B. Yang, S. K. Hong

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)


We report results of fabrication and examination of Bi3.25La0.75Ti3O12 (BLT) ferroelectric nanotubes. BLT nanotubes are suggested for developing 3D ferroelectric nanotube capacitors which could be used in high-density memory applications. BLT nanotubes were prepared by template-wetting process using polymeric sources where anodic aluminum oxide had been used as a template. After annealing, tubular BLT structures were crystallized inside the pores of the template. By selective etching of the template, released BLT nanotubes have been obtained. Crystallization and nucleation of the nanotubes were analyzed by XRD and FE-SEM techniques.

Original languageEnglish
Pages (from-to)274-278
Number of pages5
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Issue number1-2
Publication statusPublished - 2007 Mar

Bibliographical note

Funding Information:
This work was supported by the Ministry of Commerce, Industry and Energy in Korea under the System IC 2010 Project.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics


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