Bipolar resistive switching behavior in Ti/ MnO2 /Pt structure for nonvolatile memory devices

Min Kyu Yang; Jae Wan Park; Tae Kuk Ko; Jeon Kook Lee

doi:10.1063/1.3191674

Bipolar resistive switching behavior in Ti/ MnO₂ /Pt structure for nonvolatile memory devices

Min Kyu Yang, Jae Wan Park, Tae Kuk Ko, Jeon Kook Lee

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

148 Citations (Scopus)

Abstract

This study examined the electrical properties of Ti/ MnO₂ /Pt devices with stable and reproducible bipolar resistive switching behavior. The dependency of the memory behavior on the cell area and operating temperature suggest that the conducting mechanism in the low resistance states is due to the locally conducting filaments formed. X-ray photoelectron spectroscopy showed that nonlattice oxygen ions form at the MnO₂ surface. The mechanism of resistance switching in the system examined involves the generation and recovery of oxygen vacancies with the nonlattice oxygen ions.

Original language	English
Article number	042105
Journal	Applied Physics Letters
Volume	95
Issue number	4
DOIs	https://doi.org/10.1063/1.3191674
Publication status	Published - 2009

Bibliographical note

Funding Information:
This study was supported by “The National Research Program for the 0.1 Terabit Nonvolatile Memory Development Sponsored by Korea Ministry of Commerce, Industry and Energy” and “KIST Future Resource Program (Grant No. 2E21093).”

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.3191674

Cite this

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title = "Bipolar resistive switching behavior in Ti/ MnO2 /Pt structure for nonvolatile memory devices",

abstract = "This study examined the electrical properties of Ti/ MnO2 /Pt devices with stable and reproducible bipolar resistive switching behavior. The dependency of the memory behavior on the cell area and operating temperature suggest that the conducting mechanism in the low resistance states is due to the locally conducting filaments formed. X-ray photoelectron spectroscopy showed that nonlattice oxygen ions form at the MnO2 surface. The mechanism of resistance switching in the system examined involves the generation and recovery of oxygen vacancies with the nonlattice oxygen ions.",

author = "Yang, {Min Kyu} and Park, {Jae Wan} and Ko, {Tae Kuk} and Lee, {Jeon Kook}",

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AU - Yang, Min Kyu

AU - Park, Jae Wan

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AU - Lee, Jeon Kook

N1 - Funding Information: This study was supported by “The National Research Program for the 0.1 Terabit Nonvolatile Memory Development Sponsored by Korea Ministry of Commerce, Industry and Energy” and “KIST Future Resource Program (Grant No. 2E21093).”

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AB - This study examined the electrical properties of Ti/ MnO2 /Pt devices with stable and reproducible bipolar resistive switching behavior. The dependency of the memory behavior on the cell area and operating temperature suggest that the conducting mechanism in the low resistance states is due to the locally conducting filaments formed. X-ray photoelectron spectroscopy showed that nonlattice oxygen ions form at the MnO2 surface. The mechanism of resistance switching in the system examined involves the generation and recovery of oxygen vacancies with the nonlattice oxygen ions.

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