Bias-stress-stable solution-processed oxide thin film transistors

Youngmin Jeong, Changdeuck Bae, Dongjo Kim, Keunkyu Song, Kyoohee Woo, Hyunjung Shin, Guozhong Cao, Jooho Moon

Research output: Contribution to journalArticlepeer-review

133 Citations (Scopus)


We generated a novel amorphous oxide semiconductor thin film transistor (AOS-TFT) that has exellent bias-stress stability using solution-processed gallium tin zinc oxide (GSZO) layers as the channel. The cause of the resulting stable operation against the gate bias-stress was studied by comparing the TFT characteristics of the GSZO layer with a tin-doped ZnO (ZTO) layer that lacks gallium. By photoluminescence, X-ray photoelectron, and electron paramagnetic resonance spectroscopy, we found that the GSZO layer had a significantly lower oxygen vacancy, which act as trap sites, than did the ZTO film. The successful fabrication of a solution-processable GSZO layer reported here is the first step in realizing all-solution-processed transparent flexible transistors with air-stable, reproducible device characteristics.

Original languageEnglish
Pages (from-to)611-615
Number of pages5
JournalACS Applied Materials and Interfaces
Issue number3
Publication statusPublished - 2010 Mar 24

All Science Journal Classification (ASJC) codes

  • Materials Science(all)


Dive into the research topics of 'Bias-stress-stable solution-processed oxide thin film transistors'. Together they form a unique fingerprint.

Cite this