(Bi, La)4Ti3O12 (BLT) thin films grown from nanocrystalline perovskite nuclei for ferroelectric memory devices

N. K. Kim; S. J. Yeom; S. Y. Kweon; E. S. Choi; H. J. Sun; J. S. Roh; H. C. Sohn; D. W. Lee; H. S. Kim; B. H. Choi; J. W. Kim; K. J. Choi; N. J. Seong; S. G. Yoon

doi:10.1063/1.1812840

(Bi, La)₄Ti₃O₁₂ (BLT) thin films grown from nanocrystalline perovskite nuclei for ferroelectric memory devices

N. K. Kim, S. J. Yeom, S. Y. Kweon, E. S. Choi, H. J. Sun, J. S. Roh, H. C. Sohn, D. W. Lee, H. S. Kim, B. H. Choi, J. W. Kim, K. J. Choi, N. J. Seong, S. G. Yoon

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Using nanocrystalline perovskite nuclei, (117) oriented-(Bi,La) ₄Ti₃O₁₂(BLT) thin films were grown using a noble bake process for nonvolatile ferroelectric memory devices. The c-axis oriented BLT thin films have a remanent polarization (2P_r) of 8.0 μC/cm² at a 3 V driving voltage, and the (117) oriented films have a 2P_r value of about 25 μC/cm². The BLT capacitors, grown on a platinum electrode via nanocrystalline perovskite nuclei, had fatigue and imprint free characteristics after applying 1 × 10¹¹ switching cycles and for ten years at a 125°C stress. The average sensing margin of the (117) oriented BLT thin films was approximately 700 mV for a 0.65 μm² cell size and a sufficient signal margin for ten years was indicated, based on the extrapolation of the measured data for high density ferreoelectric random access memory applications.

Original language	English
Pages (from-to)	4118-4120
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	18
DOIs	https://doi.org/10.1063/1.1812840
Publication status	Published - 2004 Nov 1

Bibliographical note

Funding Information:
This work was partially supported by the Brain Korea 21 project in 2003 and by the Korea Science and Engineering Foundation through the Research Center for Advanced Magnetic Materials at Chungnam National University.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.1812840

Cite this

Kim, N. K., Yeom, S. J., Kweon, S. Y., Choi, E. S., Sun, H. J., Roh, J. S., Sohn, H. C., Lee, D. W., Kim, H. S., Choi, B. H., Kim, J. W., Choi, K. J., Seong, N. J., & Yoon, S. G. (2004). (Bi, La)₄Ti₃O₁₂ (BLT) thin films grown from nanocrystalline perovskite nuclei for ferroelectric memory devices. Applied Physics Letters, 85(18), 4118-4120. https://doi.org/10.1063/1.1812840

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title = "(Bi, La)4Ti3O12 (BLT) thin films grown from nanocrystalline perovskite nuclei for ferroelectric memory devices",

abstract = "Using nanocrystalline perovskite nuclei, (117) oriented-(Bi,La) 4Ti3O12(BLT) thin films were grown using a noble bake process for nonvolatile ferroelectric memory devices. The c-axis oriented BLT thin films have a remanent polarization (2Pr) of 8.0 μC/cm2 at a 3 V driving voltage, and the (117) oriented films have a 2Pr value of about 25 μC/cm2. The BLT capacitors, grown on a platinum electrode via nanocrystalline perovskite nuclei, had fatigue and imprint free characteristics after applying 1 × 1011 switching cycles and for ten years at a 125°C stress. The average sensing margin of the (117) oriented BLT thin films was approximately 700 mV for a 0.65 μm2 cell size and a sufficient signal margin for ten years was indicated, based on the extrapolation of the measured data for high density ferreoelectric random access memory applications.",

author = "Kim, {N. K.} and Yeom, {S. J.} and Kweon, {S. Y.} and Choi, {E. S.} and Sun, {H. J.} and Roh, {J. S.} and Sohn, {H. C.} and Lee, {D. W.} and Kim, {H. S.} and Choi, {B. H.} and Kim, {J. W.} and Choi, {K. J.} and Seong, {N. J.} and Yoon, {S. G.}",

note = "Funding Information: This work was partially supported by the Brain Korea 21 project in 2003 and by the Korea Science and Engineering Foundation through the Research Center for Advanced Magnetic Materials at Chungnam National University.",

year = "2004",

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doi = "10.1063/1.1812840",

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T1 - (Bi, La)4Ti3O12 (BLT) thin films grown from nanocrystalline perovskite nuclei for ferroelectric memory devices

AU - Kim, N. K.

AU - Yeom, S. J.

AU - Kweon, S. Y.

AU - Choi, E. S.

AU - Sun, H. J.

AU - Roh, J. S.

AU - Sohn, H. C.

AU - Lee, D. W.

AU - Kim, H. S.

AU - Choi, B. H.

AU - Kim, J. W.

AU - Choi, K. J.

AU - Seong, N. J.

AU - Yoon, S. G.

N1 - Funding Information: This work was partially supported by the Brain Korea 21 project in 2003 and by the Korea Science and Engineering Foundation through the Research Center for Advanced Magnetic Materials at Chungnam National University.

PY - 2004/11/1

Y1 - 2004/11/1

N2 - Using nanocrystalline perovskite nuclei, (117) oriented-(Bi,La) 4Ti3O12(BLT) thin films were grown using a noble bake process for nonvolatile ferroelectric memory devices. The c-axis oriented BLT thin films have a remanent polarization (2Pr) of 8.0 μC/cm2 at a 3 V driving voltage, and the (117) oriented films have a 2Pr value of about 25 μC/cm2. The BLT capacitors, grown on a platinum electrode via nanocrystalline perovskite nuclei, had fatigue and imprint free characteristics after applying 1 × 1011 switching cycles and for ten years at a 125°C stress. The average sensing margin of the (117) oriented BLT thin films was approximately 700 mV for a 0.65 μm2 cell size and a sufficient signal margin for ten years was indicated, based on the extrapolation of the measured data for high density ferreoelectric random access memory applications.

AB - Using nanocrystalline perovskite nuclei, (117) oriented-(Bi,La) 4Ti3O12(BLT) thin films were grown using a noble bake process for nonvolatile ferroelectric memory devices. The c-axis oriented BLT thin films have a remanent polarization (2Pr) of 8.0 μC/cm2 at a 3 V driving voltage, and the (117) oriented films have a 2Pr value of about 25 μC/cm2. The BLT capacitors, grown on a platinum electrode via nanocrystalline perovskite nuclei, had fatigue and imprint free characteristics after applying 1 × 1011 switching cycles and for ten years at a 125°C stress. The average sensing margin of the (117) oriented BLT thin films was approximately 700 mV for a 0.65 μm2 cell size and a sufficient signal margin for ten years was indicated, based on the extrapolation of the measured data for high density ferreoelectric random access memory applications.

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