Bendable GaN high electron mobility transistors on plastic substrates

Keon Jae Lee, Matthew A. Meitl, Jong Hyun Ahn, John A. Rogers, Ralph G. Nuzzo, Vipan Kumar, Ilesanmi Adesida

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100 Citations (Scopus)


A procedure for fabricating flexible forms of high electron mobility transistors (HEMTs) supported on plastic substrates is described. The process uses a combination of conventional top-down, wafer scale fabrication protocols to define a printable form of ultrathin, device quality multilayer AlGaNGaN single crystalline microstructures-a so-called microstructured semiconductor ink-and soft-lithographic printing methods to effect their registered transfer to a plastic substrate. These procedures yield high performance, bendable HEMT arrays that are mechanically durable-ones with effective transconductances exceeding nearly all reported forms of printed thin-film transistors.

Original languageEnglish
Article number124507
JournalJournal of Applied Physics
Issue number12
Publication statusPublished - 2006

Bibliographical note

Funding Information:
This work was supported by the Department of Energy (DEFG02-96ER45439) and used the Center for Microanalysis of Materials of the Frederick Seitz Materials Research Laboratory supported by the Department of Energy (DEFG02-96ER45439). One of the authors (K.J.L.) thanks Jae Min Myoung of the Department of Materials Science and Engineering at Yonsei University for valuable information related to the processing of GaN thin films. Another author (J.-H. A.) thanks the Korea Research Foundation (KRF) for postdoctoral fellowship support (M01-2004-000-20108-0). Another author (M. A. M.) thanks the Fannie and John Hertz Foundation for a graduate fellowship.

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)


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