Bendable GaN high electron mobility transistors on plastic substrates

Keon Jae Lee; Matthew A. Meitl; Jong Hyun Ahn; John A. Rogers; Ralph G. Nuzzo; Vipan Kumar; Ilesanmi Adesida

doi:10.1063/1.2349837

Bendable GaN high electron mobility transistors on plastic substrates

Keon Jae Lee, Matthew A. Meitl, Jong Hyun Ahn, John A. Rogers, Ralph G. Nuzzo, Vipan Kumar, Ilesanmi Adesida

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

100 Citations (Scopus)

Abstract

A procedure for fabricating flexible forms of high electron mobility transistors (HEMTs) supported on plastic substrates is described. The process uses a combination of conventional top-down, wafer scale fabrication protocols to define a printable form of ultrathin, device quality multilayer AlGaNGaN single crystalline microstructures-a so-called microstructured semiconductor ink-and soft-lithographic printing methods to effect their registered transfer to a plastic substrate. These procedures yield high performance, bendable HEMT arrays that are mechanically durable-ones with effective transconductances exceeding nearly all reported forms of printed thin-film transistors.

Original language	English
Article number	124507
Journal	Journal of Applied Physics
Volume	100
Issue number	12
DOIs	https://doi.org/10.1063/1.2349837
Publication status	Published - 2006

Bibliographical note

Funding Information:
This work was supported by the Department of Energy (DEFG02-96ER45439) and used the Center for Microanalysis of Materials of the Frederick Seitz Materials Research Laboratory supported by the Department of Energy (DEFG02-96ER45439). One of the authors (K.J.L.) thanks Jae Min Myoung of the Department of Materials Science and Engineering at Yonsei University for valuable information related to the processing of GaN thin films. Another author (J.-H. A.) thanks the Korea Research Foundation (KRF) for postdoctoral fellowship support (M01-2004-000-20108-0). Another author (M. A. M.) thanks the Fannie and John Hertz Foundation for a graduate fellowship.

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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Cite this

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title = "Bendable GaN high electron mobility transistors on plastic substrates",

abstract = "A procedure for fabricating flexible forms of high electron mobility transistors (HEMTs) supported on plastic substrates is described. The process uses a combination of conventional top-down, wafer scale fabrication protocols to define a printable form of ultrathin, device quality multilayer AlGaNGaN single crystalline microstructures-a so-called microstructured semiconductor ink-and soft-lithographic printing methods to effect their registered transfer to a plastic substrate. These procedures yield high performance, bendable HEMT arrays that are mechanically durable-ones with effective transconductances exceeding nearly all reported forms of printed thin-film transistors.",

author = "Lee, {Keon Jae} and Meitl, {Matthew A.} and Ahn, {Jong Hyun} and Rogers, {John A.} and Nuzzo, {Ralph G.} and Vipan Kumar and Ilesanmi Adesida",

note = "Funding Information: This work was supported by the Department of Energy (DEFG02-96ER45439) and used the Center for Microanalysis of Materials of the Frederick Seitz Materials Research Laboratory supported by the Department of Energy (DEFG02-96ER45439). One of the authors (K.J.L.) thanks Jae Min Myoung of the Department of Materials Science and Engineering at Yonsei University for valuable information related to the processing of GaN thin films. Another author (J.-H. A.) thanks the Korea Research Foundation (KRF) for postdoctoral fellowship support (M01-2004-000-20108-0). Another author (M. A. M.) thanks the Fannie and John Hertz Foundation for a graduate fellowship. ",

year = "2006",

doi = "10.1063/1.2349837",

language = "English",

volume = "100",

journal = "Journal of Applied Physics",

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AU - Lee, Keon Jae

AU - Meitl, Matthew A.

AU - Ahn, Jong Hyun

AU - Rogers, John A.

AU - Nuzzo, Ralph G.

AU - Kumar, Vipan

AU - Adesida, Ilesanmi

N1 - Funding Information: This work was supported by the Department of Energy (DEFG02-96ER45439) and used the Center for Microanalysis of Materials of the Frederick Seitz Materials Research Laboratory supported by the Department of Energy (DEFG02-96ER45439). One of the authors (K.J.L.) thanks Jae Min Myoung of the Department of Materials Science and Engineering at Yonsei University for valuable information related to the processing of GaN thin films. Another author (J.-H. A.) thanks the Korea Research Foundation (KRF) for postdoctoral fellowship support (M01-2004-000-20108-0). Another author (M. A. M.) thanks the Fannie and John Hertz Foundation for a graduate fellowship.

PY - 2006

Y1 - 2006

N2 - A procedure for fabricating flexible forms of high electron mobility transistors (HEMTs) supported on plastic substrates is described. The process uses a combination of conventional top-down, wafer scale fabrication protocols to define a printable form of ultrathin, device quality multilayer AlGaNGaN single crystalline microstructures-a so-called microstructured semiconductor ink-and soft-lithographic printing methods to effect their registered transfer to a plastic substrate. These procedures yield high performance, bendable HEMT arrays that are mechanically durable-ones with effective transconductances exceeding nearly all reported forms of printed thin-film transistors.

AB - A procedure for fabricating flexible forms of high electron mobility transistors (HEMTs) supported on plastic substrates is described. The process uses a combination of conventional top-down, wafer scale fabrication protocols to define a printable form of ultrathin, device quality multilayer AlGaNGaN single crystalline microstructures-a so-called microstructured semiconductor ink-and soft-lithographic printing methods to effect their registered transfer to a plastic substrate. These procedures yield high performance, bendable HEMT arrays that are mechanically durable-ones with effective transconductances exceeding nearly all reported forms of printed thin-film transistors.

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Bendable GaN high electron mobility transistors on plastic substrates

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