Behavior of strain at a thin Ge pile-up layer formed by dry oxidation of a Si0.7Ge0.3 film

B. G. Min, J. H. Yoo, H. C. Sohn, D. H. Ko, M. H. Cho, K. B. Chung, T. W. Lee

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16 Citations (Scopus)


The change of strain in Si0.7Ge0.3 films was investigated with medium energy ion scattering (MEIS). Si was removed in the films by selective oxidation at 800 °C, resulting in the formation of a Ge pile-up layer on the surface. The relaxation and the thickness of the pile-up layer were closely related to the oxidation time. MEIS data demonstrated that relaxation of the Ge layer in the depth direction occurred partially, and that the rates of relaxation decreased with depth. In addition, the rate of relaxation increased with the oxidation time. Lastly, the relaxation of the Ge layer affected the strain of the remaining Si0.7Ge0.3 substrate.

Original languageEnglish
Pages (from-to)2065-2069
Number of pages5
JournalThin Solid Films
Issue number8
Publication statusPublished - 2010 Feb 1

Bibliographical note

Funding Information:
This work was supported by the IT R&D program of MKE/IITA [2008-F-023-01, Next generation future device fabricated by using nano junction] and “System IC 2010” project of the Korea Ministry of Commerce, Industry and Energy.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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