Behavior of strain at a thin Ge pile-up layer formed by dry oxidation of a Si0.7Ge0.3 film

B. G. Min; J. H. Yoo; H. C. Sohn; D. H. Ko; M. H. Cho; K. B. Chung; T. W. Lee

doi:10.1016/j.tsf.2009.07.145

Behavior of strain at a thin Ge pile-up layer formed by dry oxidation of a Si_0.7Ge_0.3 film

B. G. Min, J. H. Yoo, H. C. Sohn, D. H. Ko, M. H. Cho, K. B. Chung, T. W. Lee

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

The change of strain in Si_0.7Ge_0.3 films was investigated with medium energy ion scattering (MEIS). Si was removed in the films by selective oxidation at 800 °C, resulting in the formation of a Ge pile-up layer on the surface. The relaxation and the thickness of the pile-up layer were closely related to the oxidation time. MEIS data demonstrated that relaxation of the Ge layer in the depth direction occurred partially, and that the rates of relaxation decreased with depth. In addition, the rate of relaxation increased with the oxidation time. Lastly, the relaxation of the Ge layer affected the strain of the remaining Si_0.7Ge_0.3 substrate.

Original language	English
Pages (from-to)	2065-2069
Number of pages	5
Journal	Thin Solid Films
Volume	518
Issue number	8
DOIs	https://doi.org/10.1016/j.tsf.2009.07.145
Publication status	Published - 2010 Feb 1

Bibliographical note

Funding Information:
This work was supported by the IT R&D program of MKE/IITA [2008-F-023-01, Next generation future device fabricated by using nano junction] and “System IC 2010” project of the Korea Ministry of Commerce, Industry and Energy.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2009.07.145

Cite this

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title = "Behavior of strain at a thin Ge pile-up layer formed by dry oxidation of a Si0.7Ge0.3 film",

abstract = "The change of strain in Si0.7Ge0.3 films was investigated with medium energy ion scattering (MEIS). Si was removed in the films by selective oxidation at 800 °C, resulting in the formation of a Ge pile-up layer on the surface. The relaxation and the thickness of the pile-up layer were closely related to the oxidation time. MEIS data demonstrated that relaxation of the Ge layer in the depth direction occurred partially, and that the rates of relaxation decreased with depth. In addition, the rate of relaxation increased with the oxidation time. Lastly, the relaxation of the Ge layer affected the strain of the remaining Si0.7Ge0.3 substrate.",

author = "Min, {B. G.} and Yoo, {J. H.} and Sohn, {H. C.} and Ko, {D. H.} and Cho, {M. H.} and Chung, {K. B.} and Lee, {T. W.}",

note = "Funding Information: This work was supported by the IT R&D program of MKE/IITA [2008-F-023-01, Next generation future device fabricated by using nano junction] and “System IC 2010” project of the Korea Ministry of Commerce, Industry and Energy.",

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AU - Min, B. G.

AU - Yoo, J. H.

AU - Sohn, H. C.

AU - Ko, D. H.

AU - Cho, M. H.

AU - Chung, K. B.

AU - Lee, T. W.

N1 - Funding Information: This work was supported by the IT R&D program of MKE/IITA [2008-F-023-01, Next generation future device fabricated by using nano junction] and “System IC 2010” project of the Korea Ministry of Commerce, Industry and Energy.

PY - 2010/2/1

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N2 - The change of strain in Si0.7Ge0.3 films was investigated with medium energy ion scattering (MEIS). Si was removed in the films by selective oxidation at 800 °C, resulting in the formation of a Ge pile-up layer on the surface. The relaxation and the thickness of the pile-up layer were closely related to the oxidation time. MEIS data demonstrated that relaxation of the Ge layer in the depth direction occurred partially, and that the rates of relaxation decreased with depth. In addition, the rate of relaxation increased with the oxidation time. Lastly, the relaxation of the Ge layer affected the strain of the remaining Si0.7Ge0.3 substrate.

AB - The change of strain in Si0.7Ge0.3 films was investigated with medium energy ion scattering (MEIS). Si was removed in the films by selective oxidation at 800 °C, resulting in the formation of a Ge pile-up layer on the surface. The relaxation and the thickness of the pile-up layer were closely related to the oxidation time. MEIS data demonstrated that relaxation of the Ge layer in the depth direction occurred partially, and that the rates of relaxation decreased with depth. In addition, the rate of relaxation increased with the oxidation time. Lastly, the relaxation of the Ge layer affected the strain of the remaining Si0.7Ge0.3 substrate.

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